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Электронный компонент: FMMT634TA

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"SuperSOT" SOT23 NPN SILICON
POWER DARLINGTON TRANSISTOR
ISSUE 1 APRIL 97
FEATURES
* 625mW POWER DISSIPATION
* Highest current capability SOT23 Darlington
* Very high hFE - specified at 2A (5K minimum)
- typically 600 at 5A
COMPLEMENTARY TYPE FMMT734
PARTMARKING DETAIL 634
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
120 V
Collector-Emitter Voltage V
CEO
100 V
Emitter-Base Voltage V
EBO
12 V
Peak Pulse Current I
CM
5
A
Continuous Collector Current I
C
900 mA
Power Dissipation P
tot
625 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 C
* Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm.
**Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%.
FMMT634
C
B
E
SOT23
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
120
170
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
100
115
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
12
16
V
I
E
=100
A
Collector Cut-Off
Current
I
CBO
10
nA
V
CB
=80V
Emitter Cut-Off
Current
I
EBO
10
nA
V
EB
=7V
Collector Emitter
Cut-Off Current
I
CES
100
nA
V
CES
=80V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.67
0.72
0.75
0.82
0.68
0.85
0.75
0.80
0.85
0.93
--
0.96
V
V
V
V
V
I
C
=100mA, I
B
=1mA *
I
C
=250mA, I
B
=1mA *
I
C
=500mA, I
B
=5mA *
I
C
=900mA, I
B
=5mA *
I
C
=900mA, I
B
=5mA *
I
C
=1A, I
B
=5mA *
Base-Emitter
Saturation Voltage
V
BE(sat)
1.5
1.65
V
I
C
=1A, I
B
=5mA *
Base-Emitter
Turn-On Voltage
V
BE(on)
1.33
1.5
V
I
C
=1A, V
CE
=5V*
Static Forward
Current Transfer
Ratio
h
FE
20K
15K
5K
50K
60K
40K
14K
600
24K
I
C
=10mA, V
CE
=5V *
I
C
=100mA, V
CE
=5V *
I
C
=1A, V
CE
=5V *
I
C
=2A, V
CE
=5V *
I
C
=5A, V
CE
=5V *
I
C
=1A, V
CE
=2V *
Transition
Frequency
f
T
140
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
9
20
pF
V
CB
=10V, f=1MHz
Turn-On Time
t
(on)
290
ns
I
C
=500mA
V
CC
=20V
I
B
=
1mA
Turn-Off Time
t
(off)
2.4
s
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%.
T
j
=150C
FMMT634
TYPICAL CHARACTERISTICS
V
C
E(s
at)
-
(
V
)
10A
1A
10mA
100mA
1mA
-55C
+25C
+100C
IC/IB=500
V
CE(sat)
v I
C
I
C
-Collector Current
I
C
-Collector Current
V
BE(sat)
v I
C
V
BE(
s
a
t
)
- (V
)
0
100mA
10mA
0.5
1.0
10A
1A
hFE V IC
IC-Collector Current
1mA
100mA
10mA
10A
1A
hF
E - T
y
pic
al
G
a
in
30K
0
60K
90K
10mA
1mA
I
C
-Collector Current
V
BE(on)
v I
C
100mA
1A
10A
V
BE(
o
n)
- (V
)
0.6
0.9
1.2
0.3
0
I
C
-Collector Current
V
CE(sat)
v I
C
V
CE(
s
a
t
)
-(V
)
1mA
0
100mA
10mA
+25C
0.4
0.8
IC/IB=100
10A
1A
+100C
-55C
+25C
+100C
-55C
+25C
-55C
+25C
+100C
IC/IB=500
VCE=5V
VCE=5V
I
C
-
C
o
l
l
e
c
t
o
r
Cur
r
en
t
(
A
)
10
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
0.01
0.1V
10V
100V
1s
DC
100ms
10ms
100us
1ms
1V
1mA
1.2
1.6
IC/IB=500
IC/IB=1000
IC/IB=5000
1.6
1.2
0.8
0.4
0
1.5
2.0
1.5
1.8
120K
0.001
FMMT634