SuperSOT
SOT23 PNP SILICON POWER
(SWITCHING) TRANSISTORS
ISSUE 3 JUNE 1996
FEATURES
* 625mW POWER DISSIPATION
* I
C
CONT 2.5A
* I
C
Up To 10A Peak Pulse Current
* Excellent h
fe
Characteristics Up To 10A (pulsed)
* Extremely Low Saturation Voltage E.g. 10mV Typ.
* Exhibits extremely low equivalent on-resistance; R
CE(sat)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
FMMT
717
FMMT
718
FMMT
720
FMMT
722
FMMT
723
UNIT
Collector-Base Voltage
V
CBO
-12
-20
-40
-70
-100
V
Collector-Emitter Voltage
V
CEO
-12
-20
-40
-70
-100
V
Emitter-Base Voltage
V
EBO
-5
-5
-5
-5
-5
V
Peak Pulse Current**
I
CM
-10
-6
-4
-3
-2.5
A
Continuous Collector Current
I
C
-2.5
-1.5
-1.5
-1.5
-1
A
Base Current
I
B
-500
mA
Power Dissipation at T
amb
=25C* P
tot
625
mW
Operating and Storage
Temperature Range
T
j
:T
stg
-55 to +150
C
*Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for these devices
C
B
E
3 - 159
FMMT717 FMMT718
FMMT720 FMMT722
FMMT723
DEVICE TYPE
COMPLEMENT
PARTMARKING
R
CE(sat)
FMMT717
FMMT617
717
72m
at 2.5A
FMMT718
FMMT618
718
97m
at 1.5A
FMMT720
FMMT619
720
163m
at 1.5A
FMMT722
722
-
FMMT723
FMMT624
723
-
DIM Millimeters
Inches
Min
Max
Min
Max
A
2.67
3.05
0.105 0.120
B
1.20
1.40
0.047 0.055
C
1.10
0.043
D
0.37
0.53 0.0145 0.021
F
0.085
0.15 0.0033 0.0059
G
NOM 1.9
NOM 0.075
K
0.01
0.10 0.0004 0.004
L
2.10
2.50 0.0825 0.0985
N
NOM 0.95
NOM 0.37
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries)
Fax: (44)161-627 5467
Zetex GmbH
Zetex Inc.
Zetex (Asia) Ltd.
These are supported by
Streitfeldstrae 19
47 Mall Drive, Unit 4
3510 Metroplaza, Tower 2
agents and distributors in
D-81673 Mnchen
Commack NY 11725
Hing Fong Road,
major countries world-wide
Germany
USA
Kwai Fong, Hong Kong
Zetex plc 1997
Telefon: (49) 89 45 49 49 0
Telephone: (516) 543-7100
Telephone:(852) 26100 611
Internet:
Fax: (49) 89 45 49 49 49
Fax: (516) 864-7630
Fax: (852) 24250 494
http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.
0.0
0.2
0.4
0.6
0.8
1.0
Collector Current
I
+
/I
*
=10
Collector Current
10A
Collector Current
Collector Current
0.0
I
+
/I
*
=20
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
+-
=2V
0
450
225
V
+-
=2V
0.2
0.0
1.0
0.8
0.6
0.4
10
1.0
0.1
0.01
SINGLE PULSE TEST T
amb
= 25 deg C
V
CE
(VOLTS)
TYPICAL CHARACTERISTICS
-55C
100C
25C
25C
100C
-55C
25C
100C
-55C
25C
100C
-55C
D.C.
1s
100ms
10ms
1ms
100
s
0.1
10A
1mA
10A
1mA
1mA
10A
1mA
Safe Operating Area
0.6
0.2
0.4
1.4
1.6
10m
1
1m
10m
V
CE(SAT)
v I
C
I
C
- Collector Current (A)
100m
10
1
I
+
/I
*
=10
I
+
/I
*
=20
I
+
/I
*
=50
+25C
100m
V
CE(SAT)
vs I
C
10mA
100mA
1A
V
BE(SAT)
vs I
C
10mA
100mA
1A
h
FE
vs I
C
10mA
100mA
1A
V
BE(ON)
vs I
C
10mA
100mA
1A
1.0
10
100
FMMT720
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
FMMT722
FMMT723
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-70
-150
-100
-200
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-70
-125
-100
-160
V
I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
-8.8
-5
-8.8
V
I
E
=-100
A
Collector Cut-Off
Current
I
CBO
-100
-100
nA
nA
V
CB
=-60V
V
CB
=-80V
Emitter Cut-Off
Current
I
EBO
-100
-100
nA
V
EB
=-4V
Collector Emitter
Cut-Off Current
I
CES
-100
-100
nA
nA
V
CES
=-60V
V
CES
=-80V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-35
-135
-140
-175
-50
-200
-220
-260
-50
-125
-210
-80
-200
-330
mV
mV
mV
mV
mV
mV
I
C
=-0.1A, I
B
=-10mA*
I
C
=-0.5A, I
B
=-20mA*
I
C
=-0.5A, I
B
=-50mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-1A, I
B
=-150mA*
I
C
=-1.5A, I
B
=-200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.94 -1.05
-0.89 -1.0
V
I
C
=-1A, I
B
=-150mA*
I
C
=-1.5A, I
B
=-200mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.78 -1.0
-0.71 -1.0
V
I
C
=-1A, V
CE
=-10V*
I
C
=-1.5A, V
CE
=-5V*
Static Forward
Current Transfer
Ratio
h
FE
300
300
175
40
470
450
275
60
10
300
300
250
475
450
375
250
30
I
C
=-10mA, V
CE
=-5V*
I
C
=-10mA, V
CE
=-10V*
I
C
=-0.1A, V
CE
=-5V*
I
C
=-0.1A, V
CE
=-10V*
I
C
=-0.5A, V
CE
=-10V*
I
C
=-1A, V
CE
=-5V*
I
C
=-1A, V
CE
=-10V*
I
C
=-1.5A, V
CE
=-5V*
I
C
=-1.5A, V
CE
=-10V*
I
C
=-3A, V
CE
=-5V*
Transition
Frequency
f
T
150
200
150
200
MHz I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance C
obo
14
20
13
20
pF
V
CB
=-10V, f=1MHz
Turn-On Time
t
(on)
40
50
ns
V
CC
=-50V, I
C
=-0.5A
I
B1
=I
B2
=-50mA
Turn-Off Time
t
(off)
700
760
ns
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FMMT722
FMMT723
3 - 164
3 - 165
DERATING CURVE
* Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate
MAXIMUM TRANSIENT THERMAL RESISTANCE
FMMT617 FMMT624
FMMT618 FMMT625
FMMT619
THERMAL CHARACTERISTICS AND DERATING INFORMATION
FMMT717 FMMT722
FMMT718 FMMT723
FMMT720
SuperSOT Series
3 - 158
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