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Электронный компонент: FMMT734

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"SUPER SOT" SOT23 PNP SILICON
POWER DARLINGTON TRANSISTOR
ISSUE 1 AUGUST 1997
FEATURES
*
625mW POWER DISSIPATION
*
Very High h
FE
at High Current (5A)
*
Extremely Low V
CE(sat)
at High Current (1A)
COMPLEMENTARY TYPE FMMT634
PARTMARKING DETAIL 734
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-100
V
Collector-Emitter Voltage
V
CEO
-100
V
Emitter-Base Voltage
V
EBO
-12
V
Peak Pulse Current
I
CM
-5
A
Continuous Collector Current
I
C
-800
mA
Power Dissipation
P
tot
625
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
* Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
C
B
E
SOT23
FMMT734
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-100
-130
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-100
-116
V
I
C
=-5mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-12
-17
V
I
E
=-100
A
Collector Cut-Off
Current
I
CBO
-10
nA
V
CB
=-80V
Emitter Cut-Off
Current
I
EBO
-10
nA
V
EB
=-7V
Collector Emitter
Cut-Off Current
I
CES
-200
nA
V
CES
=-80V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.68
-0.72
-0.78
-0.86
-0.72
-0.90
-0.75
-0.80
-0.86
-0.97
--
-1.05
V
V
V
V
V
V
I
C
=-100mA, I
B
=-1mA*
I
C
=-250mA,I
B
=-1mA*
I
C
=-500mA, I
B
=-5mA*
I
C
=-800mA, I
B
=-5mA*
I
C
=-800mA, I
B
=-5mA *
I
C
=-1A, I
B
=-5mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.60
-1.75
V
I
C
=-1A, I
B
=-5mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-1.30
-1.75
V
I
C
=-1A, V
CE
=-5V*
Static Forward
Current Transfer
Ratio
h
FE
20K
15K
5K
60K
60K
50K
15K
150
20K
I
C
=-10mA, V
CE
=-5V*
I
C
=-100mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
I
C
=-2A, V
CE
=-5V*
I
C
=-5A, V
CE
=-5V*
I
C
=-1A, V
CE
=-2V*
Transition
Frequency
f
T
140
MHz
I
C
=-10mA, V
CE
=-10V
f=100MHz
Output Capacitance C
obo
14
25
pF
V
CB
=-10V, f=1MHz
Turn-On Time
t
(on)
460
ns
I
C
=-500mA, V
CC
=-20V
I
B
=
1mA
Turn-Off Time
t
(off)
1200
ns
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
T
amb
=150C
FMMT734
V
C
E(sat
)
-(V)
10A
1A
10mA
100mA
1mA
-55C
+25C
+100C
IC/IB=500
V
CE(sat)
v I
C
I
C
-Collector Current
I
C
-Collector Current
V
BE(sat)
v I
C
V
B
E(sat
)
-
(V)
0
100mA
10mA
0.4
0.8
1.2
10A
1A
h
FE
V
I
C
I
C
-Collector Current
1mA
100mA
10mA
10A
1A
h
FE
- T
ypical Gain
0
50K
100K
10mA
1mA
IC-Collector Current
V
BE(on)
v I
C
100mA
1A
10A
V
B
E(on
)
-
(V)
0.8
1.2
0.4
0
I
C
-Collector Current
V
CE(sat)
v I
C
V
C
E(sat
)
-(V)
1mA
0
100mA
10mA
+25C
0.4
0.8
IC/IB=100
10A
1A
0.8
+100C
-55C
+25C
+100C
-55C
+25C
-55C
+25C
+100C
IC/IB=500
VCE=5V
VCE=5V
I
C
-C
o
l
l
e
c
t
o
r
Cu
r
rent
(
A
)
10
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
0.1V
10V
100V
1s
DC
100ms
10ms
100us
1ms
1V
0
0.4
1mA
0.01
1.2
1.6
IC/IB=500
IC/IB=1000
IC/IB=5000
1.2
1.6
150K
1.6
2.0
1.6
2.0
0.001
TYPICAL CHARACTERISTICS
FMMT734