SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 5 MARCH 2001
FEATURES
*
80 Volt V
CEO
*
Gain of 50 at I
C
=100mA
PARTMARKING DETAIL
FMMTA06 1G
FMMTA06R MA
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
80
V
Collector-Emitter Voltage
V
CEO
80
V
Emitter-Base Voltage
V
EBO
4
V
Continuous Collector Current
I
C
500
mA
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
VALUE
UNIT
CONDITIONS.
MIN.
MAX.
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
80
V
I
C
=1mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
4
V
I
E
=100
A
Collector Cut-Off
Current
I
CES
0.1
A
V
CES
=60V
Collector Cut-Off
Current
I
CBO
0.1
A
V
CB
=80V
Static Forward Current
Transfer Ratio
h
FE
50
50
I
C
=10mA, V
CE
=1V*
I
C
=100mA, V
CE
=1V*
Collector-Emitter Saturation
Voltage
V
CE(sat)
0.25
V
I
C
=100mA, I
B
=10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
1.2
V
I
C
=100mA, V
CE
=1V*
Transition
Frequency
f
T
100
MHz
I
C
=10mA, V
CE
=2V
f=100MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FMMTA06
C
B
E
SOT23
TBA
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