SOT23 NPN SILICON PLANAR
DARLINGTON TRANSISTORS
ISSUE 4 - DECEMBER 1996
COMPLEMENTARY TYPES - FMMTA12 NONE
FMMTA13 FMMTA63
FMMTA14 FMMTA64
PARTMARKING DETAILS
FMMTA12 3W
FMMTA13 1M
FMMTA14 1N
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
FMMTA12
FMMTA13/14
UNIT
Collector-Base Voltage
V
CBO
40
V
Collector-Emitter Voltage
V
CEO
40
V
Collector-Emitter Voltage
V
CES
20
40
V
Emitter-Base Voltage
V
EBO
10
V
Continuous Collector Current
I
C
300
mA
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL MIN.
MAX.
UNIT
CONDITIONS.
Collector-Emitter FMMTA12
Breakdown Voltage FMMTA13/14
V
(BR)CES
20
40
V
V
I
C
=100
A, I
B
=0*
I
C
=100
A, I
B
=0*
Collector Cut-Off
FMMTA12
Current
I
CES
100
nA
V
CB
=15V, V
BE
=0
Collector Cut-Off
FMMTA12
Current
FMMTA13/14
I
CBO
100
100
nA
nA
V
CB
=15V, I
E
=0
V
CB
=30V, I
E
=0
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
=10V, I
C
=0
Static Forward
FMMTA12
Current Transfer
FMMTA13
Ratio
FMMTA13
FMMTA14
FMMTA14
h
FE
20K
5K
10K
10K
20K
I
C
=10mA, V
CE
=5V*
I
C
=10mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=10mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
Collector-Emitter FMMTA12
Saturation Voltage FMMTA13/14
V
CE(sat)
1.0
0.9
V
V
I
C
=10mA, I
B
=0.01mA
I
C
=100mA, I
B
=0.1mA
Base-Emitter FMMTA12
On Voltage
FMMTA13/14
V
BE(on)
1.4
2.0
V
V
I
C
=10mA, V
CE
=5V*
I
C
=100mA,V
CE
=5V*
*Measured under pulsed conditions. Pulse width =300
s. Duty cycle
2%
Spice parameter data is available upon request for these devices
For typical graphs see FMMT38A datasheet
FMMTA12
FMMTA13
FMMTA14
C
B
E
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