SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTOR
ISSUE 2 MARCH 1995
PARTMARKING DETAIL
FMMTA20 1C
FMMTA20R 3C
COMPLEMENTARY TYPE FMMTA70
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
4
V
Continuous Collector Current
I
C
100
mA
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
40
V
I
C
=1mA, I
E
=0
Emitter-Base
Breakdown Voltage
V
(BR)EBO
4
V
I
E
=100mA, I
C
=0
Collector Cut-Off
Current
I
CBO
0.1
A
V
CB
=30V, I
E
=0
Static Forward
Current Transfer Ratio
h
FE
40
400
I
C
=5mA, V
CE
=10V*
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.25
V
I
C
=10mA,I
B
=1mA
Transition
Frequency
f
T
125
MHz
I
C
=5mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
4
pF
V
CB
=10V, f=140kHz, I
E
=0
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FMMTA20
C
B
E
SOT23
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