SOT23 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTORS
ISSUE 4 MARCH 2001
PARTMARKING DETAIL
FMMTA42 3E
FMMTA42R
7E
COMPLEMENTARY TYPES FMMTA42 FMMTA92
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
FMMTA42
UNIT
Collector-Base Voltage
V
CBO
300
V
Collector-Emitter Voltage
V
CEO
300
V
Emitter-Base Voltage
V
EBO
5
V
Continuous Collector Current
I
C
200
mA
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN.
MAX.
MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
300
200
V
I
C
=100
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
300
200
V
I
C
=1mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
6
6
V
I
E
=100
A, I
C
=0
Collector Cut-Off
Current
I
CBO
0.1
0.1
A
A
V
CB
=200V, I
E
=0
V
CB
=160V, I
E
=0
Emitter Cut-Off
Current
I
EBO
0.1
0.1
A
A
V
EB
=6V, I
C
=0
V
EB
=4V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5
0.4
V
I
C
=20mA, I
B
=2mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
0.9
V
I
C
=20mA, I
B
=2mA*
Static Forward
Current Transfer
Ratio
h
FE
25
40
40
25
40
50
200
I
C
=1mA, V
CE
=10V*
I
C
=10mA, V
CE
=10V*
I
C
=30mA, V
CE
=10V*
Transition
Frequency
f
T
50
50
MHz
I
C
=10mA, V
CE
=20V
f=20MHz
Output Capacitance
C
obo
6
8
pF
V
CB
=20V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FMMTA42
C
B
E
SOT23
TBA
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