SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 JANUARY 1996
7
FEATURES
* Gain of 50 at I
C
=100mA
PARTMARKING DETAIL -
FMMTA55 - 2H
FMMTA56 - 2G
FMMTA55R - NB
FMMTA56R - MB
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
FMMTA55 FMMTA56
UNIT
Collector-Base Voltage
V
CBO
-60
-80
V
Collector-Emitter Voltage
V
CEO
-60
-80
V
Emitter-Base Voltage
V
EBO
-4
V
Continuous Collector Current
I
C
-500
mA
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
FMMTA55
FMMTA56
PARAMETER
SYMBOL MIN.
MAX. MIN.
MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-60
-80
V
I
C
=-1mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-4
-4
V
I
E
=-100
A, I
C
=0
Collector-Emitter
Cut-Off Current
I
CES
-0.1
-0.1
A
V
CE
=-60V
Collector-Base
Cut-Off Current
I
CBO
-0.1
-0.1
A
V
CB
=-80V, I
E
=0
V
CB
=-60V, I
E
=0
Static Forward
Current Transfer Ratio
h
FE
50
50
50
50
I
C
=-10mA, V
CE
=1V*
I
C
=-100mA, V
CE
=1V*
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.25
-0.25 V
I
C
=-100mA,
I
B
=-10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-1.2
-1.2
V
I
C
=-100mA, V
CE
=-1V*
Transition
Frequency
f
T
100
100
MHz
I
C
=-10mA, V
CE
=-2V
f=100MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FMMTA55
FMMTA56
3 - 177
C
B
E
SOT23
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