SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTORS
ISSUE 3 - JANUARY 1996
7
PARTMARKING
DETAILS: - FMMTA92
-
4E
FMMTA93 - 2E
FMMTA92R - 8E
FMMTA93R - 6E
COMPLEMENTARY TYPES: FMMTA92 - FMMTA42
FMMTA93
-
FMMTA43
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
FMMTA92
FMMTA93
UNIT
Collector-Base Voltage
V
CBO
-300
-200
V
Collector-Emitter Voltage
V
CEO
-300
-200
V
Emitter-Base Voltage
V
EBO
-5
-5
V
Continuous Collector Current
I
C
-200
-200
mA
Power Dissipation at T
amb
= 25C
P
tot
330
330
mW
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
FMMTA92
FMMTA93
PARAMETER
SYMBOL MIN.
MAX. MIN.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-300
-200
V
I
C
=-100
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-300
-200
V
I
C
=-1mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
-5
V
I
E
=-100
A, I
C
=0
Collector Cut-Off
Current
I
CBO
-0.25
-0.25
A
A
V
CB
=-200V, I
E
=0
V
CB
=-160V, I
E
=0-
Emitter Cut-Off
Current
I
EBO
-0.1
-0.1
A
V
EB
=-3V, I
E
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.5
-0.4
V
I
C
=-20mA, I
B
=-2mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
-0.9
V
I
C
=-20mA, I
B
=-2mA*
Static Forward
Current Transfer
Ratio
h
FE
25
40
25
25
40
30
150
I
C
=-1mA, V
CE
=10V*
I
C
=-10mA, V
CE
=10V*
I
C
=-30mA,V
CE
=-10V*
Transition Frequency f
T
50
50
MHz
I
C
=-10mA, V
CE
=-20V
f=20MHz
Output Capacitance
C
obo
6
8
pF
V
CB
=-20V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FMMTA92
FMMTA93
C
B
E
SOT23
TYPICAL CHARACTERISTICS
h
S
ta
t
i
c F
o
r
wa
rd
Cu
rre
n
t T
ra
n
sf
e
r Ra
tio
50
40
0.1
10
100
60
1.0
V
+-
=10V
f
T
r
an
si
ti
o
n
F
re
q
u
e
n
cy
(M
H
z)
110
30
0.1
10
100
1.0
50
90
130
70
150
170
I
C
-Collector Current (mA)
V
+
-
(
sa
t)
Co
l
l
e
cto
r-E
m
i
tte
r
Sa
tu
ra
tio
n
V
o
l
ta
ge
(
V
o
lts)
0
10
1.0
I
+
/ I
*
=10
1.0
3.0
2.0
100
V
+-
=20V
V
CE(sat)
vs I
C
h
FE
v I
C
I
C
-Collector Current (mA)
I
C
-Collector Current (mA)
f
T
vs I
C
FMMTA92
FMMTA93
3 - 180
3 - 179
SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTORS
ISSUE 3 - JANUARY 1996
7
PARTMARKING
DETAILS: - FMMTA92
-
4E
FMMTA93 - 2E
FMMTA92R - 8E
FMMTA93R - 6E
COMPLEMENTARY TYPES: FMMTA92 - FMMTA42
FMMTA93
-
FMMTA43
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
FMMTA92
FMMTA93
UNIT
Collector-Base Voltage
V
CBO
-300
-200
V
Collector-Emitter Voltage
V
CEO
-300
-200
V
Emitter-Base Voltage
V
EBO
-5
-5
V
Continuous Collector Current
I
C
-200
-200
mA
Power Dissipation at T
amb
= 25C
P
tot
330
330
mW
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
FMMTA92
FMMTA93
PARAMETER
SYMBOL MIN.
MAX. MIN.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-300
-200
V
I
C
=-100
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-300
-200
V
I
C
=-1mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
-5
V
I
E
=-100
A, I
C
=0
Collector Cut-Off
Current
I
CBO
-0.25
-0.25
A
A
V
CB
=-200V, I
E
=0
V
CB
=-160V, I
E
=0-
Emitter Cut-Off
Current
I
EBO
-0.1
-0.1
A
V
EB
=-3V, I
E
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.5
-0.4
V
I
C
=-20mA, I
B
=-2mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
-0.9
V
I
C
=-20mA, I
B
=-2mA*
Static Forward
Current Transfer
Ratio
h
FE
25
40
25
25
40
30
150
I
C
=-1mA, V
CE
=10V*
I
C
=-10mA, V
CE
=10V*
I
C
=-30mA,V
CE
=-10V*
Transition Frequency f
T
50
50
MHz
I
C
=-10mA, V
CE
=-20V
f=20MHz
Output Capacitance
C
obo
6
8
pF
V
CB
=-20V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FMMTA92
FMMTA93
C
B
E
SOT23
TYPICAL CHARACTERISTICS
h
S
ta
t
i
c F
o
r
wa
rd
Cu
rre
n
t T
ra
n
sf
e
r Ra
tio
50
40
0.1
10
100
60
1.0
V
+-
=10V
f
T
r
an
si
ti
o
n
F
re
q
u
e
n
cy
(M
H
z)
110
30
0.1
10
100
1.0
50
90
130
70
150
170
I
C
-Collector Current (mA)
V
+
-
(
sa
t)
Co
l
l
e
cto
r-E
m
i
tte
r
Sa
tu
ra
tio
n
V
o
l
ta
ge
(
V
o
lts)
0
10
1.0
I
+
/ I
*
=10
1.0
3.0
2.0
100
V
+-
=20V
V
CE(sat)
vs I
C
h
FE
v I
C
I
C
-Collector Current (mA)
I
C
-Collector Current (mA)
f
T
vs I
C
FMMTA92
FMMTA93
3 - 180
3 - 179
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