SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 - MARCH 2001
PARTMARKING DETAILS:
FMMTA92 - 4E
FMMTA92R
-
8E
COMPLEMENTARY TYPES:
FMMTA92 - FMMTA42
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
FMMTA92
UNIT
Collector-Base Voltage
V
CBO
-300
V
Collector-Emitter Voltage
V
CEO
-300
V
Emitter-Base Voltage
V
EBO
-5
V
Continuous Collector Current
I
C
-200
mA
Power Dissipation at T
amb
= 25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
FMMTA92
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-300
V
I
C
=-100
A, I
E
=0
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-300
V
I
C
=-1mA, I
B
=0*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5
V
I
E
=-100
A, I
C
=0
Collector Cut-Off
Current
I
CBO
-0.25
A
A
V
CB
=-200V, I
E
=0
V
CB
=-160V, I
E
=0-
Emitter Cut-Off Current
I
EBO
-0.1
A
V
EB
=-3V, I
E
=0
Collector-Emitter Saturation
Voltage
V
CE(sat)
-0.5
V
I
C
=-20mA, I
B
=-2mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
V
I
C
=-20mA, I
B
=-2mA*
Static Forward Current
Transfer Ratio
h
FE
25
40
25
I
C
=-1mA, V
CE
=10V*
I
C
=-10mA, V
CE
=10V*
I
C
=-30mA,V
CE
=-10V*
Transition Frequency
f
T
50
MHz
I
C
=-10mA, V
CE
=-20V
f=20MHz
Output Capacitance
C
obo
6
pF
V
CB
=-20V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FMMTA92
C
B
E
SOT23
TBA
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