C
B
E
SOT23 NPN SILICON PLANAR HIGH GAIN
MEDIUM POWER TRANSISTOR
ISSUE 1 NOVEMBER 1997
FEATURES
Very low equivalent on-resistance; R
CE(sat)
=160m
at 1.25A
COMPLEMENTARY TYPE
FMMTL720
PARTMARKING DETAIL
L69
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
100
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
5
V
Continuous Collector Current
I
C
1.25
A
Peak Pulse Current
I
CM
2
A
Base Current
I
B
200
mA
Power Dissipation at T
amb
=25C
P
tot
500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
FMMTL619
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
100
210
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
50
70
V
I
C
=5mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
8.5
V
I
E
=100
A
Collector Cut-Off Current I
CBO
10
nA
V
CB
=40V
Emitter Cut-Off Current
I
EBO
10
nA
V
EB
=4V
Collector Cut-Off Current I
CES
10
nA
V
CE
=40V
Collector-Emitter
Saturation Voltage
V
CE(sat)
24
60
100
195
45
100
180
330
mV
mV
mV
mV
I
C
=100mA, I
B
=10mA*
I
C
=250mA, I
B
=10mA*
I
C
=500mA, I
B
=25mA*
I
C
=1.25A, I
B
=125mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1020
1100
mV
I
C
=1.25A, I
B
=125mA*
Base-Emitter
Turn On Voltage
V
BE(on)
895
1000
mV
I
C
=1.25A, V
CE
=2V*
Static Forward
Current Transfer Ratio
h
FE
200
300
200
100
30
400
450
400
230
50
I
C
=10mA, V
CE
=5V
I
C
=200mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
I
C
=1A, V
CE
=5V*
I
C
=2A, V
CE
=5V*
Transition Frequency
f
T
180
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Collector-Base
Breakdown Voltage
C
obo
6
8
pF
V
CB
=10V, f=1MHz
Switching times
t
on
t
off
182
379
ns
ns
I
C
=1A, V
CC
=10V
I
B1
=-I
B2
=10mA
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FMMTL619
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