C
B
E
SOT23 PNP SILICON PLANAR HIGH GAIN
MEDIUM POWER TRANSISTOR
ISSUE 1 DECEMBER 1997
FEATURES
Very low equivalent on-resistance; R
CE(sat)
=160m
at 1.25A
COMPLEMENTARY TYPE
FMMTL617
PARTMARKING DETAIL
L77
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-12
V
Collector-Emitter Voltage
V
CEO
-12
V
Emitter-Base Voltage
V
EBO
-5
V
Continuous Collector Current
I
C
-1.25
A
Peak Pulse Current
I
CM
-4
A
Base Current
I
B
-200
mA
Power Dissipation at T
amb
=25C
P
tot
-500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
FMMTL717
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-12
-35
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-12
-25
V
I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
-8.5
V
I
E
=-100
A
Collector Cut-Off Current I
CBO
-10
nA
V
CB
=-10V
Emitter Cut-Off Current
I
EBO
-10
nA
V
EB
=-4V
Collector Cut-Off Current I
CES
-10
nA
V
CE
=-10V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-24
-94
-160
-200
-40
-140
-240
-290
mV
mV
mV
mV
I
C
=-100mA, I
B
=-10mA*
I
C
=-500mA, I
B
=-20mA*
I
C
=-1A, I
B
=-50mA*
I
C
=-1.25A,I
B
=-50mA
Base-Emitter
Saturation Voltage
V
BE(sat)
-970
-1100
mV
I
C
=-1.25A, I
B
=-50mA*
Base-Emitter
Turn On Voltage
V
BE(on)
-875
-1000
mV
I
C
=-1.25A, V
CE
=-2V*
Static Forward
Current Transfer Ratio
h
FE
300
300
180
100
50
490
450
275
180
110
I
C
=-10mA, V
CE
=-2V
I
C
=-100mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-3A, V
CE
=-2V*
Transition Frequency
f
T
205
MHz
I
C
=-50mA, V
CE
=-10V
f=100MHz
Collector-Base
Breakdown Voltage
C
obo
15
20
pF
V
CB
=-10V, f=1MHz
Switching times
t
on
t
off
76
149
ns
ns
I
C
=-1A, V
CC
=-10V
I
B1
=I
B2
=-10mA
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FMMTL717
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