C
B
E
SOT23 PNP SILICON PLANAR HIGH GAIN
MEDIUM POWER TRANSISTOR
ISSUE 1 DECEMBER 1997
FEATURES
Very low equivalent on-resistance; R
CE(sat)
=210m
at 1.5A
COMPLEMENTARY TYPE
FMMTL618
PARTMARKING DETAIL
L78
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-20
V
Collector-Emitter Voltage
V
CEO
-20
V
Emitter-Base Voltage
V
EBO
-5
V
Continuous Collector Current
I
C
-1
A
Peak Pulse Current
I
CM
-2
A
Base Current
I
B
-200
mA
Power Dissipation at T
amb
=25C
P
tot
-500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
FMMTL718
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-20
-65
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-20
-55
V
I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
-8.8
V
I
E
=-100
A
Collector Cut-Off Current I
CBO
-10
nA
V
CB
=-15V
Emitter Cut-Off Current
I
EBO
-10
nA
V
EB
=-4V
Collector Cut-Off Current I
CES
-10
nA
V
CE
=-15V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-33
-130
-230
-315
-50
-180
-320
-450
mV
mV
mV
mV
I
C
=-100mA, I
B
=-10mA*
I
C
=-500mA, I
B
=-20mA*
I
C
=-1A, I
B
=-50mA*
I
C
=-1.5A,I
B
=-100mA
Base-Emitter
Saturation Voltage
V
BE(sat)
-950
-1100
mV
I
C
=-1.25A, I
B
=-100mA*
Base-Emitter
Turn On Voltage
V
BE(on)
-850
-1000
mV
I
C
=-1.25A, V
CE
=-2V*
Static Forward
Current Transfer Ratio
h
FE
300
300
200
120
50
500
450
320
200
80
I
C
=-10mA, V
CE
=-2V
I
C
=-100mA, V
CE
=-2V*
I
C
=-0.5A, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-1.5A, V
CE
=-2V*
Transition Frequency
f
T
265
MHz
I
C
=-50mA, V
CE
=-10V
f=100MHz
Collector-Base
Breakdown Voltage
C
obo
9
12
pF
V
CB
=-10V, f=1MHz
Switching times
t
on
t
off
108
121
ns
ns
I
C
=-1A, V
CC
=-10V
I
B1
=I
B2
=-10mA
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FMMTL718