SOT23 SILICON PLANAR
VARIABLE CAPACITANCE DIODE
ISSUE 3 JANUARY 1998
PIN CONFIGURATION
PARTMARKING DETAIL
FMMV3102 4C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Reverse Breakdown
Voltage
V
BR
30
V
I
R
= 10
A
Reverse current
I
R
10
nA
V
R
= 25V
Series Inductance
L
S
3.0
nH
f=250MHz
Diode Capacitance
Temperature
Coefficient
T
CC
280
ppm/ C
V
R
= 3V, f=1MHz
Case Capacitance
C
C
0.1
p
F
f=1MHz
TUNING CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Diode Capacitance
C
d
20
25
pF
V
R
= 3V, f=1MHz
Capacitance Ratio
C
d
/ C
d
4.5
V
R
= 3V/25V, f=1MHz
Figure of MERIT
Q
200
300
V
R
= 3V, f=50MHz
Spice parameter data is available upon request for this device
FMMV3102
1
3
2
SOT23
1
3
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