NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 SEPT 93
FEATURES
* 45 Volt V
CEO
* 1 Amp continuous current
* P
tot
=1 Watt
REFER TO ZTX450 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
45
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
2
A
Continuous Collector Current
I
C
1
A
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
60
V
I
C
=100
A, I
E
=0
Collector-Emitter
Sustaining Voltage
V
CEO(SUS)
45
V
I
C
=10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
A, I
C
=0
Collector Cut-Off
Current
I
CBO
0.1
A
V
CB
=45V, I
E
=0
Emitter Cut-Off Current I
EBO
0.1
A
V
EB
=4V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.25
V
I
C
=150mA, I
B
=15mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.1
V
I
C
=150mA, I
B
=15mA*
Static Forward Current
Transfer Ratio
h
FE
100
15
300
I
C
=150mA, V
CE
=10V*
I
C
=1A, V
CE
=10V*
Transition
Frequency
f
T
150
I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
15
pF
V
CB
=10V, f=1MHz
E-Line
TO92 Compatible
FXT450
3-31
B
C
E
PDF 
ZIP