NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTOR
ISSUE 1 MARCH 94
FEATURES
* 80 Volt V
CEO
* Gain of 2K at I
C
=1 Amp
* P
tot
= 1 Watt
APPLICATIONS
* Lamp, solenoid and relay drivers
* Replacement of TO126 and TO220 packages
REFER TO ZTX603 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
100
V
Collector-Emitter Voltage
V
CEO
80
V
Emitter-Base Voltage
V
EBO
10
V
Peak Pulse Current
I
CM
4
A
Continuous Collector Current
I
C
1
A
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
100
V
I
C
=100
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
80
V
I
C
=10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
10
V
I
E
=100
A, I
C
=0
Collector Cut-Off
Current
I
CBO
0.01
10
A
A
V
CB
=80V, I
E
=0
V
CB
=80V,
T
amb
=100C
Emitter Cut-Off Current I
EBO
0.1
A
V
EB
=8V, I
C
=0
Colllector-Emitter
Cut-Off Current
I
CES
10
A
V
CES
=80V
Collector-Emitter
Saturation Voltage
V
CE(sat)
1.0
1.0
V
V
I
C
=0.4A, I
B
=0.4mA*
I
C
=1A, I
B
=1mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.8
V
I
C
=1A, I
B
=1mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
1.7
V
IC=1A, V
CE
=5V*
Static Forward Current
Transfer Ratio
h
FE
2000
5000
2000
500
100K
I
C
=50mA, V
CE
=5V
I
C
=500mA, V
CE
=5V*
I
C
=1A, V
CE
=5V*
I
C
=2A, V
CE
=5V*
Transition
Frequency
f
T
150
MHz
I
C
=100mA, V
CE
=10V
f=20MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
E-Line
TO92 Compatible
FXT603
3-43
B
C
E
PDF 
ZIP