NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 FEB 94
FEATURES
* 25 Volt V
CEO
* 2 Amps continuous current
* Low
saturation
voltage
* P
tot
= 1 Watt
APPLICATIONS
* Motor driver
REFER TO ZTX649 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
35
V
Collector-Emitter Voltage
V
CEO
25
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
6
A
Continuous Collector Current
I
C
2
A
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
35
V
I
C
=100
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
25
V
I
C
=10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
A, I
C
=0
Collector Cut-Off
Current
I
CBO
0.1
10
A
A
V
CB
=30V, I
E
=0
V
CB
=30V,
T
amb
=100C
Emitter Cut-Off Current I
EBO
0.1
A
V
EB
=4V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.12
0.23
0.3
0.5
V
V
I
C
=1A, I
B
=100mA*
I
C
=2A, I
B
=200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
1.25
V
I
C
=1A, I
B
=100mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
0.8
1
V
IC=1A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
70
100
75
15
200
200
150
50
300
I
C
=50mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=6A, V
CE
=2V*
Transition Frequency
f
T
150
MHz
I
C
=100mA, V
CE
=5V
f=100MHz
Output Capacitance
C
obo
50
pF
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse Width=300
s. Duty cycle
2%
E-Line
TO92 Compatible
FXT649
3-46
B
C
E
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