NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 FEB 94
FEATURES
* 300 Volt V
CEO
* 0.5 Amps continuous current
* P
tot
= 1 Watt
APPLICATIONS
* Telephone dialler circuits
* Video output drivers
REFER TO ZTX657 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
300
V
Collector-Emitter Voltage
V
CEO
300
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
1
A
Continuous Collector Current
I
C
0.5
A
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
300
V
I
C
=100
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
300
V
I
C
=10mA, , I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
A, I
C
=0
Collector Cut-Off
Current
I
CBO
100
nA
V
CB
=200V, I
E
=0
Emitter Cut-Off Current I
EBO
100
nA
V
EB
=3V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5
V
I
C
=100mA, I
B
=10mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1
V
I
C
=100mA, I
B
=10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
1
V
IC=100mA, V
CE
=5V*
Static Forward Current
Transfer Ratio
h
FE
40
50
I
C
=10mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
Transition
Frequency
f
T
30
MHz
I
C
=10mA, V
CE
=20V
f=20MHz
Output Capacitance
C
obo
20
pF
V
CB
=20V, f=1MHz
* Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
E-Line
TO92 Compatible
FXT657
3-50
B
C
E
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