PNP SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTOR
ISSUE 1 FEB 94
FEATURES
* 100 Volt V
CEO
* Gain of 3K at I
C
=1 Amp
* P
tot
= 1 Watt
APPLICATIONS
* Lamp, solenoid and relay drivers
* Replacement of TO126 and TO220 darlington transistors
REFER TO ZTX704 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-120
V
Collector-Emitter Voltage
V
CEO
-100
V
Emitter-Base Voltage
V
EBO
-10
V
Peak Pulse Current
I
CM
-4
A
Continuous Collector Current
I
C
-1
A
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-120
V
I
C
=-100
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-100
V
I
C
=-10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-10
V
I
E
=-100
A, I
C
=0
Collector Cut-Off
Current
I
CBO
-0.1
-10
A
A
V
CB
=-100V, I
E
=0
V
CB
=-100V,
T
amb
=100C
Collector Cut-Off
Current
I
CES
-10
A
V
CES
=-80V
Emitter Cut-Off
Current
I
EBO
-0.1
A
V
EB
=-8V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-1.3
-2.5
V
V
I
C
=-1A, I
B
=-1mA*
I
C
=-2A, I
B
=-2mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.8
V
I
C
=-1A, I
B
=-10mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
-1.7
V
IC=-1A, V
CE
=-5V*
Static Forward
Current Transfer
Ratio
h
FE
3k
3k
3k
2k
30k
I
C
=-10mA, V
CE
=-5V*
I
C
=-100mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
I
C
=-2A, V
CE
=-5V*
Transition
Frequency
f
T
160
MHz
I
C
=-100mA, V
CE
=-10V
f=20MHz
B
C
E
E-Line
TO92 Compatible
FXT704
3-54
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