SOT223
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1- FEBRUARY 1997
FEATURES
*
V
CEO
= 17.5V
*
5 Amp Continuous Current
*
20 Amp Pulse Current
*
Low Saturation Voltage
*
High Gain
*
Extremely Low Equivalent On-resistance; R
CE(sat)
= 50m
at 5A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
17.5
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
20
A
Continuous Collector Current
I
C
5
A
Base Current
I
B
500
mA
Power Dissipation at T
amb
=25C
P
tot
2.5
W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150
C
The power which can be dissipated assuming the device is mounted in typical manner on a PCB
with copper equal to 2 inches x 2 inches.
FZT1048A
C
C
E
B
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
VALUE
UNIT
CONDITIONS.
MIN.
TYP.
MAX.
Collector-Base Breakdown
Voltage
V
(BR)CBO
50
85
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
CES
50
85
V
I
C
=100
A*
Collector-Emitter
Breakdown Voltage
V
CEO
17.5
24
V
I
C
=10mA
Collector-Emitter
Breakdown Voltage
V
CEV
50
85
V
I
C
=100
A, V
EB
=1V
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5
8.7
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
0.3
10
nA
V
CB
=35V
Emitter Cut-Off Current
I
EBO
0.3
10
nA
V
EB
=4V
Collector Emitter Cut-Off
Current
I
CES
0.3
10
nA
V
CE
=35V
Collector-Emitter Saturation
Voltage
V
CE(sat)
27
55
155
250
45
75
210
350
mV
mV
mV
mV
I
C
=0.5A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=3A, I
B
=15mA*
I
C
=5A, I
B
=25mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
920
1000
mV
I
C
=5A, I
B
=25mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
880
970
mV
I
C
=5A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
280
300
300
180
50
440
450
450
300
80
1200
I
C
=10mA, V
CE
=2V*
I
C
=0.5A, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
I
C
=20A, V
CE
=2V*
Transition Frequency
f
T
150
MHz
I
C
=50mA, V
CE
=10V
f=50MHz
Output Capacitance
C
obo
60
80
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
120
ns
I
C
=4A, I
B
=40mA, V
CC
=10V
t
off
310
ns
I
C
=4A, I
B
=40mA, V
CC
=10V
FZT1048A
FZT1048A
1m
100m
1m
I
C
- Collector Current (A)
V
CE(sat)
v I
C
0
V
CE
(s
at
)
- (V)
IC/IB=200
IC/IB=100
IC/IB=50
h
FE
- T
ypical
Gain
0
I
C
- Collector Current (A)
h
FE
v I
C
+25C
+100C
V
BE
(o
n
)
- (V
)
-55C
0
I
C
- Collector Current (A)
V
BE(on)
v I
C
V
CE
(s
at
)
- (V)
0
I
C
- Collector Current (A)
V
CE(sat)
v I
C
V
BE
(s
at
)
- (V)
0
IC - Collector Current (A)
V
BE(sat)
v I
C
1s
100ms
I
C
- Co
l
l
e
c
t
o
r Current (
A
)
100m
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100us
+150C
VCE=2V
+25C
VCE=2V
10m
100m
1
10
100
0.2
0.4
0.6
0.8
1
10m
100m
1
10
100
10m
1m
100m
1
10
100
1m
10m
100m
100
10
1
10m
1m
100m
1
10
100
+150C
+100C
+25C
-55C
0.2
0.4
0.6
IC/IB=100
+100C
+25C
-55C
200
400
600
800
0.2
0.4
0.6
0.8
1
1.2
IC/IB=100
-55C
+25C
+100C
+150C
0.3
0.6
0.9
1.2
1.5
1
10
100
1
10
100
DC
TYPICAL CHARACTERISTICS
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