SOT223 NPN SILICON PLANAR
MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 4 - FEBRUARY 1998
FEATURES
*
V
CEO
= 40V
* 5 Amp Continuous Current
* 20 Amp Pulse Current
* Low Saturation Voltage
* High Gain
* Extremely Low Equivalent On-resistance; R
CE(sat)
= 50m
at 5A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
150 V
Collector-Emitter Voltage V
CEO
40 V
Emitter-Base Voltage V
EBO
5
V
Peak Pulse Current I
CM
10 A
Continuous Collector Current I
C
5 A
Base Current I
B
500 mA
Power Dissipation at T
amb
=25C P
tot
2.5 W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150 C
The power which can be dissipated assuming the device is mounted in typical manner on a PCB
with copper equal to 2 inches x 2 inches.
FZT1051A
C
C
E
B
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
150
190
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
CES
150
190
V
I
C
=100
A *
Collector-Emitter
Breakdown Voltage
V
CEO
40
60
V
I
C
=10mA
Collector-Emitter
Breakdown Voltage
V
CEV
150
190
V
I
C
=100
A, V
EB
=1V
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5
9
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
0.3
10
nA
V
CB
=120V
Emitter Cut-Off Current
I
EBO
0.3
10
nA
V
EB
=4V
Collector Emitter Cut-Off
Current
I
CES
0.3
10
nA
V
CES
=120V
Collector-Emitter
Saturation Voltage
V
CE(sat)
17
85
140
250
25
120
180
340
mV
mV
mV
mV
I
C
=0.2A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
= 20mA*
I
C
=5A, I
B
=100mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
980
1100
mV
I
C
=5A, I
B
=100mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
915
1000
mV
I
C
=5A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
290
270
130
40
440
450
220
55
1200
I
C
=10mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
Transition Frequency
f
T
155
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
27
40
pF
V
CB
=10V, f=1MHz
Turn-on Time
t
on
220
ns
I
C
=3A, I
B
=30mA, V
CC
=10V
Turn-off Time
t
off
540
ns
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FZT1051A
FZT1051A
1m
100
1m
100
1m
100
100m
100
100
1m
1m
100
I
C
- Collector Current (A)
V
CE(sat)
v I
C
0
1.0
V
CE(sa
t)
- (V)
IC/IB=50
IC/IB=100
IC/IB=200
+25C
-55C
h
FE
-
T
ypical
Gain
750
+100C
0
I
C
- Collector Current (A)
h
FE
v I
C
+25C
+100C
V
BE(on)
-
(V)
1.6
0.8
-55C
0
I
C
- Collector Current (A)
V
BE(on)
v I
C
+100C
+150C
V
CE(sa
t)
- (V)
1.0
+25C
0
IC - Collector Current (A)
V
CE(sat)
v I
C
+100C
+150C
V
BE(sa
t)
- (V)
1.2
0.6
+25C
0
IC - Collector Current (A)
V
BE(sat)
v I
C
1s
100ms
I
C
- Co
llect
o
r
Current
(
A
)
100
DC
100m
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100us
+150C
VCE=2V
+25C
-55C
IC/IB=100
VCE=2V
-55C
IC/IB=100
0.2
0.4
0.6
0.8
10m
100m
1
10
10m
100m
1
10
0.2
0.4
0.6
0.8
10m
100m
1
10
250
500
10m
100m
1
10
0.3
0.9
10m
100m
1
10
0.4
1.2
1
10
1
10
TYPICAL CHARACTERISTICS
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