SOT223
SOT223 NPN SILICON PLANAR
MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 2 - MARCH 2001
FEATURES
*
V
CEO
= 75V
*
4.5 Amp Continuous Current
*
10 Amp Pulse Current
*
Low Saturation Voltage
*
High Gain
*
Extremely Low Equivalent On-resistance; R
CE(sat)
= 78m
at 4.5A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
150
V
Collector-Emitter Voltage
V
CEO
75
V
Emitter-Base Voltage
V
EBO
7.5
V
Peak Pulse Current
I
CM
10
A
Continuous Collector Current
I
C
4.5
A
Base Current
I
B
500
mA
Power Dissipation at T
amb
=25C
P
tot
2.5
W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150
C
The power which can be dissipated assuming the device is mounted in typical manner on a PCB
with copper equal to 2 inches x 2 inches.
FZT1053A
C
C
E
B
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
150
250
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
CES
150
250
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
CEO
75
100
V
I
C
=10mA
Collector-Emitter
Breakdown Voltage
V
CEV
150
250
V
I
C
=100
A, V
EB
=1V
Emitter-Base
Breakdown Voltage
V
(BR)EBO
7.5
8.8
V
I
E
=100
A
Collector Cut-Off
Current
I
CBO
0.9
10
nA
V
CB
=120V
Emitter Cut-Off Current I
EBO
0.3
10
nA
V
EB
=4V
Collector Emitter
Cut-Off Current
I
CES
1.5
10
nA
V
CES
=120V
Collector-Emitter
Saturation Voltage
V
CE(sat)
21
55
150
160
350
30
75
200
210
440
mV
mV
mV
mV
mV
I
C
=0.2A, I
B
=20mA*
I
C
=0.5A, I
B
=20mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=100mA*
I
C
=4.5A, I
B
=200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
900
1000
mV
I
C
=3A, I
B
=100mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
825
950
mV
I
C
=3A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
270
300
300
40
440
450
450
60
20
1200
I
C
=10mA, V
CE
=2V*
I
C
=0.5A, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=4.5A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
Switching Times
t
on
162
ns
I
C
=2A, I
B1
=I
B2
=
20mA,
V
CC
=50V
t
off
900
ns
I
C
=2A, I
B1
=I
B2
=
20mA,
V
CC
=50V
Transition Frequency
f
T
140
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
21
30
pF
V
CB
=10V, f=1MHz
FZT1053A
SPICE PARAMETERS
*ZETEX FZT1053A Spice model Last revision 18/3/97
*
.MODEL FZT1053A
NPN IS=2.1E-12 NF=1.0 BF=600 IKF=2.2 VAF=100
+
ISE=0.9E-13 NE=1.25 NR=0.99 BR=150 IKR=2.5 VAR=15
+
ISC=5.0E-10 NC=1.76 RB=0.1 RE=0.028 RC=0.016
+
CJC=75.1E-12 CJE=520E-12 MJC=0.415 MJE=0.367
+
VJC=0.512 VJE=0.766 TF=550E-12 TR=22E-9
*
(C) 1997 ZETEX PLC
The copyright in this model and the design embodied belong to Zetex PLC ("Zetex"). It is supplied free of charge by Zetex for
the purpose of research and design and may be used or copied intact (including this notice) for that purpose only. All other
rights are reserved. The model is believed accurate but no condition or warranty as to its merchantability or fitness for
purpose is given and no liability in respect of any use is accepted by Zetex PLC, its distributors or agents. Zetex PLC, Fields
New Road, Chadderton, Oldham OL9 8NP
FZT1053A
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH
Zetex Inc.
Zetex (Asia) Ltd.
These are supported by
Streitfeldstrae 19
47 Mall Drive, Unit 4
3701-04 Metroplaza, Tower 1
agents and distributors in
D-81673 Mnchen
Commack NY 11725
Hing Fong Road,
major countries world-wide
Germany
USA
Kwai Fong, Hong Kong
Zetex plc 2001
Telefon: (49) 89 45 49 49 0
Telephone: (631) 543-7100
Telephone:(852) 26100 611
Fax: (49) 89 45 49 49 49
Fax: (631) 864-7630
Fax: (852) 24250 494
http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of
any product or service.
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