SOT223 NPN SILICON PLANAR
SWITCHING TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* 40 Volt V
CEO
* Fast switching
COMPLEMENTARY TYPE -
FZT2907A
PARTMARKING DETAIL -
FZT2222A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
75
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
5
V
Continuous Collector Current
I
C
600
mA
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to+150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
VALUE
UNIT CONDITIONS.
MIN.
MAX.
Collector-Base Breakdown
Voltage
V
(BR)CBO
75
V
I
C
=10
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
40
V
I
C
=10mA, I
B
=0 *
Emitter-Base Breakdown
Voltage
V
(BR)EBO
6
V
I
E
=10
A, I
C
=0
Collector Cut-Off Current
I
CBO
10
10
nA
A
V
CB
=50V, I
E
=0
V
CB
=50V, I
E
=0, T
amb
=150C
Emitter Cut-Off Current
I
EBO
10
nA
V
EB
=3V, I
C
=0
Collector-Emitter Cut-Off
Current
I
CEX
10
nA
V
CE
=60V, V
EB(off)
=3V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.3
1.0
V
V
I
C
=150mA, I
B
=15mA*
I
C
=500mA, I
B
=50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.6
1.2
2.0
V
V
I
C
=150mA, I
B
=15mA*
I
C
=500mA, I
B
=50mA*
Static Forward Current
Transfer Ratio
h
FE
35
50
75
35
100
50
40
300
I
C
=0.1mA, V
CE
=10V*
I
C
=1mA, V
CE
=10V *
I
C
=10mA, V
CE
=10V*
I
C
=10mA, V
CE
=10V,T
amb
=-55C*
I
C
=150mA, V
CE
=10V*
I
C
=150mA, V
CE
=1V*
I
C
=500mA, V
CE
=10V*
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT2222A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
VALUE
UNIT
CONDITIONS.
MIN.
MAX.
Transition Frequency
f
T
300
MHz
I
C
=20mA, V
CE
=20V
f=100MHz
Output Capacitance
C
obo
8
pF
V
CB
=10V, I
E
=0, f=140KHz
Input Capacitance
C
ibo
25
pF
V
EB
=0.5V, I
C
=0 f=140KHz
Delay Time
t
d
10
ns
V
CE
=30V, V
BE(off)
=0.5V
I
C
=150mA, I
B1
=15mA
(See Delay Test Circuit)
Rise Time
t
r
25
ns
Storage Time
t
s
225
ns
V
CE
=30V, I
C
=150mA
I
B1
= I
B2
=15mA
(See Storage Test Circuit)
Fall Time
t
f
60
ns
FZT2222A
Scope:
R
in
> 100 k
C
in
< 12 pF
Rise Time < 5 ns
0
0.5V
9.9V
Generator rise time <2ns
Pulse width (t
1
)<200ns
Duty cycle = 2%
+30V
200
619
+30V
1N916
-3V
1K
200
Scope:
R
in
> 100 k
C
in
< 12 pF
Rise Time < 5 ns
s
-13.8 V
=500
=100
s
<5ns
+16.2 V
0
Duty cycle = 2%
DELAY AND RISE TEST CIRCUIT
3 - 296
C
C
E
B
STORAGE TIME AND FALL TIME TEST CIRCUIT
3 - 297
SOT223 NPN SILICON PLANAR
SWITCHING TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* 40 Volt V
CEO
* Fast switching
COMPLEMENTARY TYPE -
FZT2907A
PARTMARKING DETAIL -
FZT2222A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
75
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
5
V
Continuous Collector Current
I
C
600
mA
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to+150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
VALUE
UNIT CONDITIONS.
MIN.
MAX.
Collector-Base Breakdown
Voltage
V
(BR)CBO
75
V
I
C
=10
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
40
V
I
C
=10mA, I
B
=0 *
Emitter-Base Breakdown
Voltage
V
(BR)EBO
6
V
I
E
=10
A, I
C
=0
Collector Cut-Off Current
I
CBO
10
10
nA
A
V
CB
=50V, I
E
=0
V
CB
=50V, I
E
=0, T
amb
=150C
Emitter Cut-Off Current
I
EBO
10
nA
V
EB
=3V, I
C
=0
Collector-Emitter Cut-Off
Current
I
CEX
10
nA
V
CE
=60V, V
EB(off)
=3V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.3
1.0
V
V
I
C
=150mA, I
B
=15mA*
I
C
=500mA, I
B
=50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.6
1.2
2.0
V
V
I
C
=150mA, I
B
=15mA*
I
C
=500mA, I
B
=50mA*
Static Forward Current
Transfer Ratio
h
FE
35
50
75
35
100
50
40
300
I
C
=0.1mA, V
CE
=10V*
I
C
=1mA, V
CE
=10V *
I
C
=10mA, V
CE
=10V*
I
C
=10mA, V
CE
=10V,T
amb
=-55C*
I
C
=150mA, V
CE
=10V*
I
C
=150mA, V
CE
=1V*
I
C
=500mA, V
CE
=10V*
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT2222A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
VALUE
UNIT
CONDITIONS.
MIN.
MAX.
Transition Frequency
f
T
300
MHz
I
C
=20mA, V
CE
=20V
f=100MHz
Output Capacitance
C
obo
8
pF
V
CB
=10V, I
E
=0, f=140KHz
Input Capacitance
C
ibo
25
pF
V
EB
=0.5V, I
C
=0 f=140KHz
Delay Time
t
d
10
ns
V
CE
=30V, V
BE(off)
=0.5V
I
C
=150mA, I
B1
=15mA
(See Delay Test Circuit)
Rise Time
t
r
25
ns
Storage Time
t
s
225
ns
V
CE
=30V, I
C
=150mA
I
B1
= I
B2
=15mA
(See Storage Test Circuit)
Fall Time
t
f
60
ns
FZT2222A
Scope:
R
in
> 100 k
C
in
< 12 pF
Rise Time < 5 ns
0
0.5V
9.9V
Generator rise time <2ns
Pulse width (t
1
)<200ns
Duty cycle = 2%
+30V
200
619
+30V
1N916
-3V
1K
200
Scope:
R
in
> 100 k
C
in
< 12 pF
Rise Time < 5 ns
s
-13.8 V
=500
=100
s
<5ns
+16.2 V
0
Duty cycle = 2%
DELAY AND RISE TEST CIRCUIT
3 - 296
C
C
E
B
STORAGE TIME AND FALL TIME TEST CIRCUIT
3 - 297
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