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Электронный компонент: FZT549

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SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 2 MARCH 1995
7
PARTMARKING DETAIL
FZT549
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-35
V
Collector-Emitter Voltage
V
CEO
-30
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-2
A
Continuous Collector Current
I
C
-1
A
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-35
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-30
V
I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off
Current
I
CBO
-0.1
-10
A
A
V
CB
=-30V
V
CB
=-30V, T
amb
=100C
Emitter Cut-Off Current
I
EBO
-0.1
A
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.50
-0.75
V
V
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
-200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.25
V
I
C
=-1A, I
B
=-100mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
-1.0
V
I
C
=-1A, V
CE
=-2V*
Static Forward Current
h
FE
70
100
80
30
300
I
C
=-50mA, V
CE
=-2V
I
C
=-500mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
Transition Frequency
f
T
100
MHz
I
C
=-100mA, V
CE
=-5V,
f =100MHz
Output Capacitance
C
obo
10
pF
V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
For typical characteristics graphs see FMMT549 datasheet.
FZT549
C
C
E
B
3 - 191