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Электронный компонент: FZT558

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SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH VOLTAGE TRANSISTOR
ISSUE 2 DECEMBER 1995
FEATURES
* 400 Volt V
CEO
* 200mA continuous current
* P
tot
= 2 Watt
PARTMARKING DETAIL -
FZT558
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-400
V
Collector-Emitter Voltage
V
CEO
-400
V
Emitter-Base Voltage
V
EBO
-5
V
Continuous Collector Current
I
C
-200
mA
Power Dissipation
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-400
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
BR(CEO)
-400
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current I
CBO
-100
nA
V
CB
=-320V
Collector Cut-Off Current I
CES
-100
nA
V
CE
=-320V
Emitter Cut-Off Current
I
EBO
-100
nA
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.2
-0.5
V
V
I
C
=-20mA, I
B
=-2mA*
I
C
=-50mA, I
B
=-6mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
V
I
C
=-50mA, I
B
=-5mA*
Base-Emitter
Turn On Voltage
V
BE(on)
-0.9
V
I
C
=-50mA, V
CE
=-10V*
Static Forward Current
Transfer Ratio
h
FE
100
100
15
300
I
C
=-1mA, V
CE
=-10V
I
C
=-50mA, V
CE
=-10V*
I
C
=-100mA, V
CE
=-10V*
Transition
Frequency
f
T
50
MHz
I
C
=-10mA, V
CE
=-20V
f=20MHz
Collector-Base
Breakdown Voltage
C
obo
5
pF
V
CB
=-20V, f=1MHz
Switching times
t
on
t
off
95
1600
ns
ns
I
C
=-50mA, V
C
=-100V
I
B1
=5mA, I
B2
=-10mA
* Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT558
-55C
+25C
+100C
+175C
+100C
+25C
-55C
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (
V
ol
ts)
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (
V
ol
ts)
-55C
+25C
+100C
+175C
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
h
- No
rm
ali
s
e
d Ga
in
V
- (
V
ol
ts)
V
- (
V
ol
ts)
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=10
I
C
/I
B
=10
V
CE
=10V
V
CE
=10V
300
200
100
h
-
T
yp
i
c
a
l Gai
n
0.001
0.001
0.001
0.001
0.001
I
C
/I
B
=20
-55C
+25C
+100C
+175C
FZT558
C
C
E
B
3 - 193
3 - 192
SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH VOLTAGE TRANSISTOR
ISSUE 2 DECEMBER 1995
FEATURES
* 400 Volt V
CEO
* 200mA continuous current
* P
tot
= 2 Watt
PARTMARKING DETAIL -
FZT558
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-400
V
Collector-Emitter Voltage
V
CEO
-400
V
Emitter-Base Voltage
V
EBO
-5
V
Continuous Collector Current
I
C
-200
mA
Power Dissipation
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-400
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
BR(CEO)
-400
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current I
CBO
-100
nA
V
CB
=-320V
Collector Cut-Off Current I
CES
-100
nA
V
CE
=-320V
Emitter Cut-Off Current
I
EBO
-100
nA
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.2
-0.5
V
V
I
C
=-20mA, I
B
=-2mA*
I
C
=-50mA, I
B
=-6mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
V
I
C
=-50mA, I
B
=-5mA*
Base-Emitter
Turn On Voltage
V
BE(on)
-0.9
V
I
C
=-50mA, V
CE
=-10V*
Static Forward Current
Transfer Ratio
h
FE
100
100
15
300
I
C
=-1mA, V
CE
=-10V
I
C
=-50mA, V
CE
=-10V*
I
C
=-100mA, V
CE
=-10V*
Transition
Frequency
f
T
50
MHz
I
C
=-10mA, V
CE
=-20V
f=20MHz
Collector-Base
Breakdown Voltage
C
obo
5
pF
V
CB
=-20V, f=1MHz
Switching times
t
on
t
off
95
1600
ns
ns
I
C
=-50mA, V
C
=-100V
I
B1
=5mA, I
B2
=-10mA
* Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT558
-55C
+25C
+100C
+175C
+100C
+25C
-55C
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (
V
ol
ts)
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (
V
ol
ts)
-55C
+25C
+100C
+175C
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
h
- No
rm
ali
s
e
d Ga
in
V
- (
V
ol
ts)
V
- (
V
ol
ts)
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=10
I
C
/I
B
=10
V
CE
=10V
V
CE
=10V
300
200
100
h
-
T
yp
i
c
a
l Gai
n
0.001
0.001
0.001
0.001
0.001
I
C
/I
B
=20
-55C
+25C
+100C
+175C
FZT558
C
C
E
B
3 - 193
3 - 192