SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 1 NOVEMBER 1998
FEATURES
*
500 Volt V
CEO
*
150mA continuous current
*
P
tot
= 2 Watt
PARTMARKING DETAIL
FZT560
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-500
V
Collector-Emitter Voltage
V
CEO
-500
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-500
mA
Continuous Collector Current
I
C
-150
mA
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-500
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
CEO(SUS)
-500
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-100
nA
V
CB
=-500V
Collector Cut-Off Current
I
CES
-100
nA
V
CE
=-500V
Emitter Cut-Off Current
I
EBO
-100
nA
V
EB
=-5V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.20
-0.5
V
V
I
C
=-20mA, I
B
=-2mA
I
C
=-50mA, I
B
=-10mA*
Base-Emitter Saturation
Voltage
V
BE(sat)
-0.9
V
I
C
=-50mA, I
B
=-10mA*
Base-Emitter Turn On Voltage
V
BE(on)
-0.9
V
I
C
=-50mA, V
CE
=-10V*
Static Forward Current
Transfer Ratio
h
FE
100
80
15 typ
300
300
I
C
=-1mA, V
CE
=-10V
I
C
=-50mA, V
CE
=-10V*
I
C
=-100mA, V
CE
=-10V*
Transition Frequency
f
T
60
MHz
I
C
=-10mA, V
CE
=-20V
f=50MHz
Output Capacitance
C
obo
8
pF
V
CB
=-20, f=1MHz
Switching times
t
on
t
off
110 typ.
1.5 typ
ns
s
V
CE
=-100, I
C
=-50mA,
I
B1
=-5mA,I
B2
=10mA,
* Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
C
C
E
B
FZT560
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