SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 - DECEMBER 2001
FEATURES
Low equivalent on resistance R
CE(sat)
= 350m
at 1A
PART MARKING DETAIL -
FZT591A
COMPLEMENTARY TYPE -
FZT491A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-40
V
Collector-Emitter Voltage
V
CEO
-40
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-2
A
Continuous Collector Current
I
C
-1
A
Base Current
I
B
-200
mA
Power Dissipation at T
amb
=25C
P
tot
2
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL MIN.
MAX.
UNI
T
CONDITIONS.
Collector-Base Breakdown Voltage
V
(BR)CBO
-40
V
I
C
=-100
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-40
V
I
C
=-10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-100
nA
V
CB
=-30V
Emitter Cut-Off Current
I
EBO
-100
nA
V
EB
=-4V
Collector-Emitter Cut-Off Current
I
CES
-100
nA
V
CES
=-30V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-0.2
-0.35
-0.5
V
V
V
I
C
=-100mA,I
B
=-1mA*
I
C
=-500mA,I
B
=-20mA*
I
C
=-1A, I
B
=-100mA*
Base-Emitter Saturation Voltage
V
BE(sat)
-1.1
V
I
C
=-1A, I
B
=-50mA*
Base-Emitter Turn-on Voltage
V
BE(on)
-1.0
V
I
C
=-1A, V
CE
=-5V*
Static Forward Current Transfer Ratio
h
FE
300
300
250
160
30
800
I
C
=-1mA,
I
C
=-100mA*,
I
C
=-500mA*, V
CE
=-5V
I
C
=-1A*,
I
C
=-2A*,
Transition Frequency
f
T
150
MHz I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance
C
obo
10
pF
V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT591A
1
FZT591A
2
C
E
B
C
SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 - DECEMBER 2001
FEATURES
Low equivalent on resistance R
CE(sat)
= 350m
at 1A
PART MARKING DETAIL -
FZT591A
COMPLEMENTARY TYPE -
FZT491A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-40
V
Collector-Emitter Voltage
V
CEO
-40
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-2
A
Continuous Collector Current
I
C
-1
A
Base Current
I
B
-200
mA
Power Dissipation at T
amb
=25C
P
tot
2
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL MIN.
MAX.
UNI
T
CONDITIONS.
Collector-Base Breakdown Voltage
V
(BR)CBO
-40
V
I
C
=-100
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-40
V
I
C
=-10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-100
nA
V
CB
=-30V
Emitter Cut-Off Current
I
EBO
-100
nA
V
EB
=-4V
Collector-Emitter Cut-Off Current
I
CES
-100
nA
V
CES
=-30V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-0.2
-0.35
-0.5
V
V
V
I
C
=-100mA,I
B
=-1mA*
I
C
=-500mA,I
B
=-20mA*
I
C
=-1A, I
B
=-100mA*
Base-Emitter Saturation Voltage
V
BE(sat)
-1.1
V
I
C
=-1A, I
B
=-50mA*
Base-Emitter Turn-on Voltage
V
BE(on)
-1.0
V
I
C
=-1A, V
CE
=-5V*
Static Forward Current Transfer Ratio
h
FE
300
300
250
160
30
800
I
C
=-1mA,
I
C
=-100mA*,
I
C
=-500mA*, V
CE
=-5V
I
C
=-1A*,
I
C
=-2A*,
Transition Frequency
f
T
150
MHz I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance
C
obo
10
pF
V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT591A
1
FZT591A
2
C
E
B
C
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