SOT223 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 3 NOVEMBER 1995
FEATURES
* 2A continuous current
* Useful h
FE
up to 6A
* Fast Switching
PARTMARKING DETAIL DEVICE TYPE IN FULL
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
100
V
Collector-Emitter Voltage
V
CEO
80
V
Emitter-Base Voltage
V
EBO
10
V
Peak Pulse Current
I
CM
6
A
Continuous Collector Current
I
C
2
A
Power Dissipation
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
100
240
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
80
110
V
I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
10
16
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
0.01
10
A
A
V
CB
=80V
V
CB
=80V,
T
amb
=100C
Emitter Cut-Off Current
I
EBO
0.1
A
V
EB
=8V
Collector Cut-Off Current
I
CES
10
A
V
CES
=80V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.79
0.80
0.88
0.99
0.86
0.88
0.90
1.00
1.13
V
V
V
V
V
I
C
=0.25A, I
B
=0.25mA*
I
C
=0.4A, I
B
=0.4mA*
I
C
=1A, I
B
=1mA*
I
C
=2A, I
B
=20mA*
I
C
=2A, I
B
=20mA
FZT603
C
C
E
B
T
j
=150C
Dim
Millimeters
Inches
Min
Max
Min
Max
A
6.3
6.7
0.248
0.264
B
3.3
3.7
0.130
0.146
C
1.7
0.067
D
0.6
0.8
0.024
0.031
E
2.9
3.1
0.114
0.122
F
0.24
0.32
0.009
0.013
G
NOM 4.6
NOM 0.181
H
0.85
1.05
0.033
0.041
K
0.02
0.10
0.0008
0.004
L
6.7
7.3
0.264
0.287
M
NOM 2.3
NOM 0.0905
PACKAGE OUTLINE DETAILS
FZT603
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Base-Emitter
Saturation Voltage
V
BE(sat)
1.7
1.95
V
I
C
=2A, I
B
=20mA*
Base-Emitter Turn-On Voltage V
BE(on)
1.5
1.75
V
I
C
=2A, V
CE
=5V*
Static Forward
Current Transfer Ratio
h
FE
3k
5k
3k
2k
14k
15k
14k
10k
2k
750
100k
I
C
=50mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
I
C
=1A, V
CE
=5V*
I
C
=2A, V
CE
=5V*
I
C
=5A, V
CE
=5V*
I
C
=6A, V
CE
=5V*
Transition Frequency
f
T
150
MHz
I
C
=100mA, V
CE
=10V
f=20MHz
Output Capacitance
C
ibo
90
pF
V
EB
=500mV, f=1MHz
Output Capacitance
C
obo
15
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
0.5
s
I
C
=0.5A, V
CE
=10V
I
B1
=I
B2
=0.5mA
t
off
1.6
s
*Measured under pulsed conditions. Pulse width=300ms. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT603
FZT603
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
-
(V
ol
ts
)
0
0.4
0.01
0.1
10
1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
C
-
Collector Current (Amps)
V
BE(sat)
v I
C
V
-
(V
ol
ts
)
0.6
0.01
10
0.1
1
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I
C
/I
B
=100
I
C
/I
B
=100
I
C
-
Collector Current (Amps)
h
FE
v I
C
h
-
Gai
n
no
rm
ali
se
d
t
o
1
A
m
p
0.001
0.01
10
0.1
1
0.5
1.0
1.5
2.0
2.5
V
CE
=5V
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
V
-
(V
ol
ts
)
0.6
1.0
1.4
1.8
0.01
0.1
1
10
0.2
V
CE
=5V
-55C
+25C
+100C
0.4
0.8
1.2
1.6
2.2
0.2
-55C
+25C
+100C
+175C
-55C
+25C
+100C
+175C
0.4
-55C
+25C
+100C
DC
1s
10ms
100ms
1ms
100
S
1
10
100
0.1
0.01
0.1
1
10
T
amb
= 25 C
V
CE
- Collector Voltage (Volts)
Safe Operating Area
Single Pulse Test
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Base-Emitter
Saturation Voltage
V
BE(sat)
1.7
1.95
V
I
C
=2A, I
B
=20mA*
Base-Emitter Turn-On Voltage V
BE(on)
1.5
1.75
V
I
C
=2A, V
CE
=5V*
Static Forward
Current Transfer Ratio
h
FE
3k
5k
3k
2k
14k
15k
14k
10k
2k
750
100k
I
C
=50mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
I
C
=1A, V
CE
=5V*
I
C
=2A, V
CE
=5V*
I
C
=5A, V
CE
=5V*
I
C
=6A, V
CE
=5V*
Transition Frequency
f
T
150
MHz
I
C
=100mA, V
CE
=10V
f=20MHz
Output Capacitance
C
ibo
90
pF
V
EB
=500mV, f=1MHz
Output Capacitance
C
obo
15
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
0.5
s
I
C
=0.5A, V
CE
=10V
I
B1
=I
B2
=0.5mA
t
off
1.6
s
*Measured under pulsed conditions. Pulse width=300ms. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT603
FZT603
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
-
(V
ol
ts
)
0
0.4
0.01
0.1
10
1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
C
-
Collector Current (Amps)
V
BE(sat)
v I
C
V
-
(V
ol
ts
)
0.6
0.01
10
0.1
1
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I
C
/I
B
=100
I
C
/I
B
=100
I
C
-
Collector Current (Amps)
h
FE
v I
C
h
-
Gai
n
no
rm
ali
se
d
t
o
1
A
m
p
0.001
0.01
10
0.1
1
0.5
1.0
1.5
2.0
2.5
V
CE
=5V
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
V
-
(V
ol
ts
)
0.6
1.0
1.4
1.8
0.01
0.1
1
10
0.2
V
CE
=5V
-55C
+25C
+100C
0.4
0.8
1.2
1.6
2.2
0.2
-55C
+25C
+100C
+175C
-55C
+25C
+100C
+175C
0.4
-55C
+25C
+100C
DC
1s
10ms
100ms
1ms
100
S
1
10
100
0.1
0.01
0.1
1
10
T
amb
= 25 C
V
CE
- Collector Voltage (Volts)
Safe Operating Area
Single Pulse Test
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