SOT223 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 4 FEBRUARY 1996
FEATURES
* 25 Volt V
CEO
* 3 Amp continuous current
* Low saturation voltage
* Excellent h
FE
specified up to 6A
COMPLEMENTARY TYPE FZT749
PARTMARKING DETAIL
FZT649
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
35
V
Collector-Emitter Voltage
V
CEO
25
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
8
A
Continuous Collector Current
I
C
3
A
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
35
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
25
V
I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off Current I
CBO
0.1
10
A
A
V
CB
=30V
V
CB
=30V,
T
amb
=100C
Emitter Cut-Off Current
I
EBO
0.1
A
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.12
0.40
0.3
0.6
V
V
I
C
=1A, I
B
=100mA*
I
C
=3A, I
B
=300mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
1.25
V
I
C
=1A, I
B
=100mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
0.8
1.0
V
I
C
=1A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
70
100
75
15
200
200
150
50
300
I
C
=50mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=6A, V
CE
=2V*
Transition Frequency
f
T
150
240
MHz
I
C
=100mA, V
CE
=5V
f=100MHz
Output Capacitance
C
obo
25
50
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
55
ns
I
C
=500mA, V
CC
=10V
I
B1
=I
B2
=50mA
t
off
300
ns
*Measured under pulsed conditions. Pulse Width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT649
FZT649
C
C
E
B
3 - 206
3 - 205
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
IC
-
Collector Current (Amps)
V
-
(V
ol
ts)
0
0.2
0.01
0.1
10
1
0.4
0.6
0.8
IC
-
Collector Current (Amps)
V
BE(sat)
v I
C
V
-
(
V
ol
ts)
0.01
10
0.1
1
1.0
2.0
I
C
/I
B
=10
I
+
/I
*
=10
IC
-
Collector Current (Amps)
h
FE
v I
C
h
-
G
ai
n
0.001
0.01
10
0.1
1
200
V
+ -
=2V
0.01
0.1
1
10
0.4
20
100
0.6
IC
-
Collector Current (Amps)
V
BE(on)
v I
C
V
-
(
V
ol
ts)
0.8
1.0
1.2
1.4
0.001
0.0001
V
+ -
=2V
Switching Speeds
IC
-
Collector Current (Amps)
S
wi
tch
i
ng
ti
m
e
0.1
1
I
B1
=I
B2
=I
C
/10
0.01
ts
tf
td
tr
120
140
0
ts
ns
600
400
200
800
1000
0
td
tr
tf
ns
60
40
20
80
100
Single Pulse Test at T
amb
=25C
0.1
100
1s
100ms
10
DC
0.01
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100
s
1
10
0.1
1
SOT223 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 4 FEBRUARY 1996
FEATURES
* 25 Volt V
CEO
* 3 Amp continuous current
* Low saturation voltage
* Excellent h
FE
specified up to 6A
COMPLEMENTARY TYPE FZT749
PARTMARKING DETAIL
FZT649
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
35
V
Collector-Emitter Voltage
V
CEO
25
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
8
A
Continuous Collector Current
I
C
3
A
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
35
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
25
V
I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off Current I
CBO
0.1
10
A
A
V
CB
=30V
V
CB
=30V,
T
amb
=100C
Emitter Cut-Off Current
I
EBO
0.1
A
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.12
0.40
0.3
0.6
V
V
I
C
=1A, I
B
=100mA*
I
C
=3A, I
B
=300mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
1.25
V
I
C
=1A, I
B
=100mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
0.8
1.0
V
I
C
=1A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
70
100
75
15
200
200
150
50
300
I
C
=50mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=6A, V
CE
=2V*
Transition Frequency
f
T
150
240
MHz
I
C
=100mA, V
CE
=5V
f=100MHz
Output Capacitance
C
obo
25
50
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
55
ns
I
C
=500mA, V
CC
=10V
I
B1
=I
B2
=50mA
t
off
300
ns
*Measured under pulsed conditions. Pulse Width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT649
FZT649
C
C
E
B
3 - 206
3 - 205
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
IC
-
Collector Current (Amps)
V
-
(V
ol
ts)
0
0.2
0.01
0.1
10
1
0.4
0.6
0.8
IC
-
Collector Current (Amps)
V
BE(sat)
v I
C
V
-
(
V
ol
ts)
0.01
10
0.1
1
1.0
2.0
I
C
/I
B
=10
I
+
/I
*
=10
IC
-
Collector Current (Amps)
h
FE
v I
C
h
-
G
ai
n
0.001
0.01
10
0.1
1
200
V
+ -
=2V
0.01
0.1
1
10
0.4
20
100
0.6
IC
-
Collector Current (Amps)
V
BE(on)
v I
C
V
-
(
V
ol
ts)
0.8
1.0
1.2
1.4
0.001
0.0001
V
+ -
=2V
Switching Speeds
IC
-
Collector Current (Amps)
S
wi
tch
i
ng
ti
m
e
0.1
1
I
B1
=I
B2
=I
C
/10
0.01
ts
tf
td
tr
120
140
0
ts
ns
600
400
200
800
1000
0
td
tr
tf
ns
60
40
20
80
100
Single Pulse Test at T
amb
=25C
0.1
100
1s
100ms
10
DC
0.01
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100
s
1
10
0.1
1
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