SOT223 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 3 FEBRUARY 1995
7
FEATURES
* Low saturation voltage
COMPLEMENTARY TYPE FZT755
PARTMARKING DETAIL FZT655
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
150
V
Collector-Emitter Voltage
V
CEO
150
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
2
A
Continuous Collector Current
I
C
1
A
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
150
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
150
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off Current I
CBO
0.1
A
V
CB
=125V
Emitter Cut-Off Current
I
EBO
0.1
A
V
EB
=3V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5
0.5
V
V
I
C
=500mA, I
B
=50mA*
I
C
=1A, I
B
=200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.1
V
I
C
=500mA, I
B
=50mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
1.0
V
I
C
=500mA, V
CE
=5V*
Static Forward Current
Transfer Ratio
h
FE
50
50
20
300
I
C
=10mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
I
C
=1A, V
CE
=5V*
Transition Frequency
f
T
30
MHz
I
C
=10mA, V
CE
=20V
f=20MHz
Output Capacitance
C
obo
20
pF
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse Width=300
s. Duty cycle
2%
FZT655
FZT655
C
C
E
B
3 - 212
3 - 211
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
-
(
V
ol
t
s)
Single Pulse Test at T
amb
=25C
0.01
0.1
10
1
I
+
-
Collector Current (Amps)
V
BE(sat)
v I
C
V
-
(
V
ol
t
s)
I
C
/I
B
=10
I
+
-
Collector Current (Amps)
h
FE
v I
C
h
-
Nor
m
al
i
sed G
ai
n (
%
)
0.01
10
0.1
1
V
CE
=5V
0
0.01
10
0.1
1
0.6
0.8
1.0
1.2
I
C
/I
B
=10
0.4
40
60
80
100
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
V
-
(
V
ol
ts
)
Switching Speeds
I
+
-
Collector Current (Amps)
S
w
i
tc
hi
ng
t
i
m
e
0.1
1
I
B1
=I
B2
=I
C
/10
0.01
ts
tf
td
tr
0.6
0.7
0
ts
s
2.0
1.0
3.0
td
tr
tf
s
0.3
0.2
0.1
0.4
0.5
0.18
0.10
20
0
0.01
10
0.1
1
0.6
0.8
1.0
1.2
0.4
V
CE
=5V
V
CE
=10V
1
1000
100ms
10ms
10
DC
0.01
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
1ms
300
s
10
100
0.1
1
SOT223 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 3 FEBRUARY 1995
7
FEATURES
* Low saturation voltage
COMPLEMENTARY TYPE FZT755
PARTMARKING DETAIL FZT655
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
150
V
Collector-Emitter Voltage
V
CEO
150
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
2
A
Continuous Collector Current
I
C
1
A
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
150
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
150
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off Current I
CBO
0.1
A
V
CB
=125V
Emitter Cut-Off Current
I
EBO
0.1
A
V
EB
=3V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5
0.5
V
V
I
C
=500mA, I
B
=50mA*
I
C
=1A, I
B
=200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.1
V
I
C
=500mA, I
B
=50mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
1.0
V
I
C
=500mA, V
CE
=5V*
Static Forward Current
Transfer Ratio
h
FE
50
50
20
300
I
C
=10mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
I
C
=1A, V
CE
=5V*
Transition Frequency
f
T
30
MHz
I
C
=10mA, V
CE
=20V
f=20MHz
Output Capacitance
C
obo
20
pF
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse Width=300
s. Duty cycle
2%
FZT655
FZT655
C
C
E
B
3 - 212
3 - 211
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
-
(
V
ol
t
s)
Single Pulse Test at T
amb
=25C
0.01
0.1
10
1
I
+
-
Collector Current (Amps)
V
BE(sat)
v I
C
V
-
(
V
ol
t
s)
I
C
/I
B
=10
I
+
-
Collector Current (Amps)
h
FE
v I
C
h
-
Nor
m
al
i
sed G
ai
n (
%
)
0.01
10
0.1
1
V
CE
=5V
0
0.01
10
0.1
1
0.6
0.8
1.0
1.2
I
C
/I
B
=10
0.4
40
60
80
100
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
V
-
(
V
ol
ts
)
Switching Speeds
I
+
-
Collector Current (Amps)
S
w
i
tc
hi
ng
t
i
m
e
0.1
1
I
B1
=I
B2
=I
C
/10
0.01
ts
tf
td
tr
0.6
0.7
0
ts
s
2.0
1.0
3.0
td
tr
tf
s
0.3
0.2
0.1
0.4
0.5
0.18
0.10
20
0
0.01
10
0.1
1
0.6
0.8
1.0
1.2
0.4
V
CE
=5V
V
CE
=10V
1
1000
100ms
10ms
10
DC
0.01
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
1ms
300
s
10
100
0.1
1
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