SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 - OCTOBER 1995
FEATURES
* 400 Volt V
CEO
* Low saturation voltage
COMPLEMENTARY TYPE -
FZT758
PARTMARKING DETAIL -
FZT658
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
400
V
Collector-Emitter Voltage
V
CEO
400
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
1
A
Continuous Collector Current
I
C
0.5
A
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX.
UNIT
CONDITIONS.
Breakdown Voltage
V
(BR)CBO
400
V
I
C
=100
A
V
(BR)CEO
400
V
I
C
=10mA*
V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
100
nA
V
CB
=320V
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.3
0.25
0.5
V
V
V
I
C
=20mA, I
B
=1mA*
I
C
=50mA, I
B
=5mA*
I
C
=100mA, I
B
=10mA
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
V
I
C
=100mA, I
B
=10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
1.0
V
I
C
=100mA, V
CE
=5V*
Static Forward Current
Transfer Ratio
h
FE
50
50
40
I
C
=1mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=200mA, V
CE
=10V*
Transition Frequency
f
T
50
MHz
I
C
=10mA, V
CE
=20V
f=20MHz
Output Capacitance
C
obo
10
pF
V
CB
=20V, f=1MHz
Switching Times
t
on
130
ns
I
C
=100mA, V
CC
=100V
I
B1
=10mA, I
B2
=-20mA
t
off
3300
ns
*Measured under pulsed conditions. Pulse Width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT658
FZT658
C
C
E
B
C
C
E
B
3 - 216
3 - 215
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
-
(
V
ol
ts
)
T
amb
=25C
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (
V
ol
ts
)
-55C
+25C
+100C
+175C
+100C
+25C
-55C
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
V
- (
V
ol
ts
)
V
- (
V
o
lts
)
I
C
/I
B
=50
I
C
/I
B
=10
V
CE
=10V
V
CE
=10V
300
200
100
0.001
0.001
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
-55C
+25C
+100C
+175C
I
C
/I
B
=10
0.001
0.001
I
C
/I
B
=20
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.001
-55C
+25C
+100C
+175C
I
C
/I
B
=10
h
-
No
rm
al
i
s
ed G
a
i
n
h
-
T
yp
i
ca
l
g
ai
n
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
10
100
1s
DC
100ms
10ms
100
s
1ms
1
0.01
1000
0.001
SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 - OCTOBER 1995
FEATURES
* 400 Volt V
CEO
* Low saturation voltage
COMPLEMENTARY TYPE -
FZT758
PARTMARKING DETAIL -
FZT658
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
400
V
Collector-Emitter Voltage
V
CEO
400
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
1
A
Continuous Collector Current
I
C
0.5
A
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX.
UNIT
CONDITIONS.
Breakdown Voltage
V
(BR)CBO
400
V
I
C
=100
A
V
(BR)CEO
400
V
I
C
=10mA*
V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
100
nA
V
CB
=320V
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.3
0.25
0.5
V
V
V
I
C
=20mA, I
B
=1mA*
I
C
=50mA, I
B
=5mA*
I
C
=100mA, I
B
=10mA
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
V
I
C
=100mA, I
B
=10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
1.0
V
I
C
=100mA, V
CE
=5V*
Static Forward Current
Transfer Ratio
h
FE
50
50
40
I
C
=1mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=200mA, V
CE
=10V*
Transition Frequency
f
T
50
MHz
I
C
=10mA, V
CE
=20V
f=20MHz
Output Capacitance
C
obo
10
pF
V
CB
=20V, f=1MHz
Switching Times
t
on
130
ns
I
C
=100mA, V
CC
=100V
I
B1
=10mA, I
B2
=-20mA
t
off
3300
ns
*Measured under pulsed conditions. Pulse Width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT658
FZT658
C
C
E
B
C
C
E
B
3 - 216
3 - 215
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
-
(
V
ol
ts
)
T
amb
=25C
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (
V
ol
ts
)
-55C
+25C
+100C
+175C
+100C
+25C
-55C
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
V
- (
V
ol
ts
)
V
- (
V
o
lts
)
I
C
/I
B
=50
I
C
/I
B
=10
V
CE
=10V
V
CE
=10V
300
200
100
0.001
0.001
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
-55C
+25C
+100C
+175C
I
C
/I
B
=10
0.001
0.001
I
C
/I
B
=20
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.001
-55C
+25C
+100C
+175C
I
C
/I
B
=10
h
-
No
rm
al
i
s
ed G
a
i
n
h
-
T
yp
i
ca
l
g
ai
n
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
10
100
1s
DC
100ms
10ms
100
s
1ms
1
0.01
1000
0.001
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