SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* Extremely low equivalent on resistance; R
CE(sat)
83m
at 3A
* Gain of 400 at I
C
=3 Amps and very low saturation voltage
APPLICATIONS
* Flash gun convertors & Battery powered circuits
PARTMARKING DETAIL
FZT688B
COMPLEMENTARY TYPE -
FZT788B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
12
V
Collector-Emitter Voltage
V
CEO
12
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
10
A
Continuous Collector Current
I
C
4
A
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages
V
(BR)CBO
12
V
I
C
=100
A
V
(BR)CEO
12
V
I
C
=10mA*
V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
0.1
A
V
CB
=10V
Emitter Cut-Off Current
I
EBO
0.1
A
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.04
0.06
0.18
0.35
0.40
V
V
V
V
V
I
C
=0.1A, I
B
=1mA
I
C
=0.1A,I
B
=0.5mA*
I
C
=1A, I
B
=50mA*
I
C
=3A, I
B
=20mA*
I
C
=4A, I
B
=50mA*
Base-Emitter SaturationVoltage
V
BE(sat)
1.1
V
I
C
=3A, I
B
=20mA*
Base-Emitter Turn-On Voltage
V
BE(on)
1.0
V
I
C
=3A, V
CE
=2V
Static Forward Current Transfer
Ratio
h
FE
500
400
100
I
C
=0.1A, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
Transition Frequency
f
T
150
MHz I
C
=50mA,V
CE
=5V
f=50MHz
Input Capacitance
C
ibo
200
pF
V
EB
=0.5Vf=1MHz
Output Capacitance
C
obo
40
pF
V
CB
=10V,f=1MHz
Switching Times
t
on
t
off
40
500
ns
ns
I
C
=500mA, I
B1
=50A
I
B2
=50mA, V
CC
=10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT688B
FZT688B
C
C
E
B
3 - 218
3 - 217
-55C
+25C
+100C
+175C
+100C
+25C
-55C
0.01
0.1
1
10
0.4
0.2
0
0.8
0.6
0.01
0.1
1
10
0.4
0.2
0
0.8
0.6
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (V
o
l
ts)
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (V
o
l
ts)
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
h
-
N
or
m
al
i
se
d
G
ai
n
V
- (V
o
l
ts)
V
- (V
o
l
ts)
V
CE
=2V
V
CE
=2V
1.5K
1K
500
h
-
Ty
p
i
ca
l
Ga
in
-55C
+25C
+100C
+175C
I
C
/I
B
=100
T
amb
=25C
I
C
/I
B
=10
I
C
/I
B
=200
I
C
/I
B
=100
I
C
/I
B
=100
-55C
+25C
+100C
+175C
0
0
I
+
-
C
ol
l
e
cto
r C
u
rre
n
t
(
A
)
1
0.1
Safe Operating Area
V
CE -
Collector Emitter Voltage (V)
10V
100V
1s
DC
100ms
10ms
100
s
1ms
1V
0.01
0.1V
10
SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* Extremely low equivalent on resistance; R
CE(sat)
83m
at 3A
* Gain of 400 at I
C
=3 Amps and very low saturation voltage
APPLICATIONS
* Flash gun convertors & Battery powered circuits
PARTMARKING DETAIL
FZT688B
COMPLEMENTARY TYPE -
FZT788B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
12
V
Collector-Emitter Voltage
V
CEO
12
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
10
A
Continuous Collector Current
I
C
4
A
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages
V
(BR)CBO
12
V
I
C
=100
A
V
(BR)CEO
12
V
I
C
=10mA*
V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
0.1
A
V
CB
=10V
Emitter Cut-Off Current
I
EBO
0.1
A
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.04
0.06
0.18
0.35
0.40
V
V
V
V
V
I
C
=0.1A, I
B
=1mA
I
C
=0.1A,I
B
=0.5mA*
I
C
=1A, I
B
=50mA*
I
C
=3A, I
B
=20mA*
I
C
=4A, I
B
=50mA*
Base-Emitter SaturationVoltage
V
BE(sat)
1.1
V
I
C
=3A, I
B
=20mA*
Base-Emitter Turn-On Voltage
V
BE(on)
1.0
V
I
C
=3A, V
CE
=2V
Static Forward Current Transfer
Ratio
h
FE
500
400
100
I
C
=0.1A, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
Transition Frequency
f
T
150
MHz I
C
=50mA,V
CE
=5V
f=50MHz
Input Capacitance
C
ibo
200
pF
V
EB
=0.5Vf=1MHz
Output Capacitance
C
obo
40
pF
V
CB
=10V,f=1MHz
Switching Times
t
on
t
off
40
500
ns
ns
I
C
=500mA, I
B1
=50A
I
B2
=50mA, V
CC
=10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT688B
FZT688B
C
C
E
B
3 - 218
3 - 217
-55C
+25C
+100C
+175C
+100C
+25C
-55C
0.01
0.1
1
10
0.4
0.2
0
0.8
0.6
0.01
0.1
1
10
0.4
0.2
0
0.8
0.6
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (V
o
l
ts)
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (V
o
l
ts)
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
h
-
N
or
m
al
i
se
d
G
ai
n
V
- (V
o
l
ts)
V
- (V
o
l
ts)
V
CE
=2V
V
CE
=2V
1.5K
1K
500
h
-
Ty
p
i
ca
l
Ga
in
-55C
+25C
+100C
+175C
I
C
/I
B
=100
T
amb
=25C
I
C
/I
B
=10
I
C
/I
B
=200
I
C
/I
B
=100
I
C
/I
B
=100
-55C
+25C
+100C
+175C
0
0
I
+
-
C
ol
l
e
cto
r C
u
rre
n
t
(
A
)
1
0.1
Safe Operating Area
V
CE -
Collector Emitter Voltage (V)
10V
100V
1s
DC
100ms
10ms
100
s
1ms
1V
0.01
0.1V
10
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