B
SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* Low equivalent on-resistance; R
CE(sat)
93m
at 3A
* Gain of 300 at I
C
=2 Amps and Very low saturation voltage
APPLICATIONS
* Battery powered circuits
COMPLEMENTAY TYPE FZT688B
PARTMARKING DETAIL FZT788B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-15
V
Collector-Emitter Voltage
V
CEO
-15
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-8
A
Continuous Collector Current
I
C
-3
A
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown Voltage V
(BR)CBO
-15
V
I
C
=-100
A
Collector-Emitter Breakdown Voltage V
(BR)CEO
-15
V
I
C
=-10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-0.1
A
V
CB
=-10V
Emitter Cut-Off Current
I
EBO
-0.1
A
V
EB
=-4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-0.15
-0.25
-0.45
-0.5
V
V
V
I
C
=-0.5A, I
B
=-2.5mA*
I
C
=-1A, I
B
=-5mA*
I
C
=-2A, I
B
=-10mA*
I
C
=-3A, I
B
=-50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
V
I
C
=-1A, I
B
=-5mA*
Base-Emitter Turn-On Voltage
V
BE(on)
-0.75
V
I
C
=-1A, V
CE
=-2V*
Static Forward Current Transfer
Ratio
h
FE
500
400
300
150
1500
I
C
=-10mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-6A, V
CE
=-2V*
Transition Frequency
f
T
100
MHz
I
C
=-50mA, V
CE
=-5V
f=50MHz
Input Capacitance
C
ibo
225
pF
V
EB
=-0.5V, f=1MHz
Output Capacitance
C
obo
25
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
t
off
35
400
ns
ns
I
C
=-500mA, I
B1
=-50mA
I
B2
=-50mA, V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT788B
C
C
E
3 - 244
-55C
+25C
+100C
+100C
+25C
-55C
0.01
0.1
1
10
0.8
0.6
0
1.6
0.01
0.1
1
10
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (V
o
l
t
s
)
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (V
olt
s
)
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
h
-
N
orm
alise
d
Gain
V
- (V
olt
s
)
1200
900
600
h
- T
y
pic
a
l
Gain
T
amb
=25C
-55C
+25C
+100C
+175C
0
0
V
CE
=2V
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
V
- (V
olt
s
)
-55C
+25C
+100C
+175C
I
C
/I
B
=200
I
C
/I
B
=10
I
C
/I
B
=200
I
C
/I
B
=100
1.8
1.4
1.2
1.0
0.4
0.2
I
C
/I
B
=200
V
CE
=2V
0.8
0.6
0
1.6
1.8
1.4
1.2
1.0
0.4
0.2
300
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
10
100
1s
DC
100ms
10ms
100
s
1ms
1
0.01
0.1
10
FZT788B
3 - 245
B
SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* Low equivalent on-resistance; R
CE(sat)
93m
at 3A
* Gain of 300 at I
C
=2 Amps and Very low saturation voltage
APPLICATIONS
* Battery powered circuits
COMPLEMENTAY TYPE FZT688B
PARTMARKING DETAIL FZT788B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-15
V
Collector-Emitter Voltage
V
CEO
-15
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-8
A
Continuous Collector Current
I
C
-3
A
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown Voltage V
(BR)CBO
-15
V
I
C
=-100
A
Collector-Emitter Breakdown Voltage V
(BR)CEO
-15
V
I
C
=-10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-0.1
A
V
CB
=-10V
Emitter Cut-Off Current
I
EBO
-0.1
A
V
EB
=-4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-0.15
-0.25
-0.45
-0.5
V
V
V
I
C
=-0.5A, I
B
=-2.5mA*
I
C
=-1A, I
B
=-5mA*
I
C
=-2A, I
B
=-10mA*
I
C
=-3A, I
B
=-50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
V
I
C
=-1A, I
B
=-5mA*
Base-Emitter Turn-On Voltage
V
BE(on)
-0.75
V
I
C
=-1A, V
CE
=-2V*
Static Forward Current Transfer
Ratio
h
FE
500
400
300
150
1500
I
C
=-10mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-6A, V
CE
=-2V*
Transition Frequency
f
T
100
MHz
I
C
=-50mA, V
CE
=-5V
f=50MHz
Input Capacitance
C
ibo
225
pF
V
EB
=-0.5V, f=1MHz
Output Capacitance
C
obo
25
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
t
off
35
400
ns
ns
I
C
=-500mA, I
B1
=-50mA
I
B2
=-50mA, V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT788B
C
C
E
3 - 244
-55C
+25C
+100C
+100C
+25C
-55C
0.01
0.1
1
10
0.8
0.6
0
1.6
0.01
0.1
1
10
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (V
o
l
t
s
)
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (V
olt
s
)
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
h
-
N
orm
alise
d
Gain
V
- (V
olt
s
)
1200
900
600
h
- T
y
pic
a
l
Gain
T
amb
=25C
-55C
+25C
+100C
+175C
0
0
V
CE
=2V
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
V
- (V
olt
s
)
-55C
+25C
+100C
+175C
I
C
/I
B
=200
I
C
/I
B
=10
I
C
/I
B
=200
I
C
/I
B
=100
1.8
1.4
1.2
1.0
0.4
0.2
I
C
/I
B
=200
V
CE
=2V
0.8
0.6
0
1.6
1.8
1.4
1.2
1.0
0.4
0.2
300
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
10
100
1s
DC
100ms
10ms
100
s
1ms
1
0.01
0.1
10
FZT788B
3 - 245
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