SOT23 SILICON VARIABLE
CAPACITANCE DIODES
ISSUE 5 JANUARY 1998
FEATURES
*
Close Tolerance C-V Characteristics
*
High Tuning Ratio
*
Low I
R
Enabling Excellent Phase Noise Performance
(I
R
Typically <200pA at 25V)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
MAX
UNIT
Forward Current
I
F
200
mA
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
=25C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
CONDITIONS
Reverse Breakdown
Voltage
V
BR
25
V
I
R
=10
A
Reverse Voltage Leakage
I
R
0.2
10
nA
V
R
=20V
Temperature Coefficient
of Capacitance
0.03
0.04
%/C
V
R
=3V, f=1MHz
TUNING CHARACTERISTICS (at T
amb
=25C)
PART NO
Nominal Capacitance (pF)
V
R
=2V, f=1MHz
Minimum
Q
@ V
R
=3V
f=50MHz
Capacitance Ratio
C
2
/ C
20
at f=1MHz
MIN
NOM
MAX
MIN
MAX
ZC830A
9.0
10.0
11.0
300
4.5
6.0
ZC831A
13.5
15.0
16.5
300
4.5
6.0
ZC832A
19.8
22.0
24.2
200
5.0
6.5
ZC833A
29.7
33.0
36.3
200
5.0
6.5
ZC834A
42.3
47.0
51.7
200
5.0
6.5
ZC835A
61.2
68.0
74.8
100
5.0
6.5
ZC836A
90.0
100.0
110.0
100
5.0
6.5
Note:
No suffix
20% (e.g. ZC830), suffix B
5% (e.g. ZC830B)
Spice parameter data is available upon request for this device
ZC830/A/B
to
ZC836/A/B
1
3
2
SOT23
1
3
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