SM-8 DUAL NPN MEDIUM POWER
HIGH GAIN TRANSISTORS
ISSUE 2 - APRIL 2000
PARTMARKING DETAIL T1053
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
150
V
Collector-Emitter Voltage
V
CEO
75
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
20
A
Continuous Collector Current
I
C
5
A
Base Current
I
B
500
mA
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
Total Power Dissipation at T
amb
= 25C*
Any single die on
Both die on equally
P
tot
2.25
2.75
W
W
Derate above 25C*
Any single die on
Both die on equally
18
22
mW/ C
mW/ C
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
55.6
45.5
C/ W
C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
ZDT1053
SM-8
(8 LEAD SOT223)
C
1
C
1
C
2
C
2
B
1
E
1
B
2
E
2
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
150
245
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
CES
150
245
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
CEO
75
100
V
I
C
=10mA
Collector-Emitter
Breakdown Voltage
V
CEV
150
245
V
I
C
=100
A, V
EB
=1V
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
8.8
V
I
E
=100
A
Collector Cutoff Current
I
CBO
0.3
10
nA
V
CB
=120V
Emitter Cutoff Current
I
EBO
0.3
10
nA
V
EB
=4V
Collector Emitter Cutoff
Current
I
CES
0.3
10
nA
V
CES
=120V
Collector-Emitter Saturation
Voltage
V
CE(sat)
17
70
120
150
300
25
100
150
200
350
mV
mV
mV
mV
mV
I
C
=0.2A, I
B
=20mA*
I
C
=1A, I
B
=50mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=50mA*
I
C
=5A, I
B
=250mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1100
1200
mV
I
C
=5A, I
B
=250mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
1000
1100
mV
I
C
=5A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
260
300
150
30
420
450
220
50
15
1200
I
C
=10mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
Transition Frequency
f
T
140
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
21
30
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
90
ns
I
C
=2A, I
B
=20mA, V
CC
=50V
t
off
750
ns
I
C
=2A, I
B
=
20mA, V
CC
=50V
ZDT1053
3 - 363
3 - 364
SM-8 DUAL NPN MEDIUM POWER
HIGH GAIN TRANSISTORS
ISSUE 1 - NOVEMBER 1995
PARTMARKING DETAIL T1053
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
150
V
Collector-Emitter Voltage
V
CEO
75
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
20
A
Continuous Collector Current
I
C
5
A
Base Current
I
B
500
mA
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
Total Power Dissipation at T
amb
= 25C*
Any single die on
Both die on equally
P
tot
2.25
2.75
W
W
Derate above 25C*
Any single die on
Both die on equally
18
22
mW/ C
mW/ C
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
55.6
45.5
C/ W
C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
ZDT1053
SM-8
(8 LEAD SOT223)
C
1
C
1
C
2
C
2
B
1
E
1
B
2
E
2
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
150
245
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
CES
150
245
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
CEO
75
100
V
I
C
=10mA
Collector-Emitter
Breakdown Voltage
V
CEV
150
245
V
I
C
=100
A, V
EB
=1V
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
8.8
V
I
E
=100
A
Collector Cutoff Current
I
CBO
0.3
10
nA
V
CB
=120V
Emitter Cutoff Current
I
EBO
0.3
10
nA
V
EB
=4V
Collector Emitter Cutoff
Current
I
CES
0.3
10
nA
V
CES
=120V
Collector-Emitter Saturation
Voltage
V
CE(sat)
17
70
120
150
300
25
100
150
200
440
mV
mV
mV
mV
mV
I
C
=0.2A, I
B
=20mA*
I
C
=1A, I
B
=50mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=50mA*
I
C
=5A, I
B
=250mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1100
1200
mV
I
C
=5A, I
B
=250mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
1000
1100
mV
I
C
=5A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
260
300
150
30
420
450
220
50
15
1200
I
C
=10mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
Transition Frequency
f
T
140
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
21
30
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
90
ns
I
C
=2A, I
B
=20mA, V
CC
=50V
t
off
750
ns
I
C
=2A, I
B
=
20mA, V
CC
=50V
ZDT1053
3 - 363
3 - 364
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