SM-8 DUAL PNP MEDIUM POWER
HIGH GAIN TRANSISTORS
ISSUE 1 - AUGUST 1997
PARTMARKING DETAIL ZDT1147
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-15
V
Collector-Emitter Voltage
V
CEO
-12
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-20
A
Continuous Collector Current
I
C
-5
A
Base Current
I
B
-500
mA
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
Total Power Dissipation at T
amb
= 25C*
Any single die "on"
Both die "on" equally
P
tot
2.0
2.75
W
W
Derate above 25C*
Any single die "on"
Both die "on" equally
18
22
mW/ C
mW/ C
Thermal Resistance - Junction to Ambient*
Any single die "on"
Both die "on" equally
55.6
45.5
C/ W
C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
C
1
C
1
C
2
C
2
B
1
E
1
B
2
E
2
SM-8
(8 LEAD SOT223)
ZDT1147
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-15
-35
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
CES
-12
-25
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
CEO
-12
-25
V
I
C
=-10mA
Collector-Emitter
Breakdown Voltage
V
CEV
-12
-25
V
I
C
=-100
A, V
EB
=+1V
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5
-8.5
V
I
E
=-100
A
Collector Cutoff Current
I
CBO
-0.3
-100
nA
V
CB
=-12V
Emitter Cutoff Current
I
EBO
-0.3
-100
nA
V
EB
=-4V
Collector Emitter Cutoff
Current
I
CES
-0.3
-100
nA
V
CES
=-10V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-25
-70
-90
-115
-250
-50
-110
-130
-170
-380
mV
mV
mV
mV
mV
I
C
=-0.1A, I
B
=-1mA*
I
C
=-0.5A, I
B
=-2.5mA*
I
C
=-1A, I
B
=-6mA*
I
C
=-2A, I
B
=-20mA*
I
C
=-5A, I
B
=-50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-950
-1050
mV
I
C
=-5A, I
B
=-50mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
-905
-1000
mV
I
C
=-5A, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
270
250
200
150
90
450
400
340
250
160
60
850
I
C
=-10mA, V
CE
=-2V*
I
C
=-0.5A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-5A, V
CE
=-2V*
I
C
=-10A, V
CE
=-2V*
I
C
=-20A, V
CE
=-2V*
Transition Frequency
f
T
115
MHz
I
C
=-50mA, V
CE
=-10V
f=50MHz
Output Capacitance
C
CB
80
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
150
ns
I
C
=-4A, I
B
=-40mA, V
CC
=-10V
t
off
220
ns
I
C
=-4A, I
B
=
40mA,
V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
ZDT1147
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