SM-8 DUAL NPN MEDIUM POWER
TRANSISTORS
ISSUE 2 - AUGUST 1997
PARTMARKING DETAIL T651
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
80
V
Collector-Emitter Voltage
V
CEO
60
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
6
A
Continuous Collector Current
I
C
2
A
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
Total Power Dissipation at T
amb
= 25C*
Any single die on
Both die on equally
P
tot
2.25
2.75
W
W
Derate above 25C*
Any single die on
Both die on equally
18
22
mW/ C
mW/ C
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
55.6
45.5
C/ W
C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
ZDT651
SM-8
(8 LEAD SOT223)
C
1
C
1
C
2
C
2
B
1
E
1
B
2
E
2
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
80
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
60
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
A
Collector Cutoff
Current
I
CBO
0.1
10
A
A
V
CB
=60V
V
CB
=60V,
T
amb
=100C
Emitter Cutoff Current I
EBO
0.1
A
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.12
0.23
0.3
0.5
V
V
I
C
=1A, I
B
=100mA*
I
C
=2A, I
B
=200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
1.25
V
I
C
=1A, I
B
=100mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
0.8
1
V
I
C
=1A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
70
100
80
40
200
200
170
80
300
I
C
=50mA, V
CE
=2V*
I
C
=500mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
Transition Frequency
f
T
140
175
MHz
I
C
=100mA, V
CE
=5V
f=100MHz
Output Capacitance
C
obo
30
pF
V
CB
=10V f=1MHz
Switching Times
t
on
45
ns
I
C
=500mA, V
CC
=10V
I
B1
=I
B2
=50mA
t
off
800
ns
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
ZDT651
PDF 
ZIP