SM-8 DUAL NPN MEDIUM POWER
HIGH GAIN TRANSISTORS
ISSUE 1 - NOVEMBER 1995
PARTMARKING DETAIL T694
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
120
V
Collector-Emitter Voltage
V
CEO
120
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
1
A
Continuous Collector Current
I
C
0.5
A
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
Total Power Dissipation at T
amb
= 25C*
Any single die on
Both die on equally
P
tot
2.25
2.75
W
W
Derate above 25C*
Any single die on
Both die on equally
18
22
mW/ C
mW/ C
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
55.6
45.5
C/ W
C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
SM-8
(8 LEAD SOT223)
C
1
C
1
C
2
C
2
B
1
E
1
B
2
E
2
3 - 343
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
120
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
120
V
I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5
V
I
E
=100
A
Collector Cutoff Current
I
CBO
0.1
A
V
CB
=100V
Emitter Cutoff Current
I
EBO
0.1
A
V
EB
=4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
0.25
0.5
V
V
I
C
=0.1A, I
B
=0.5mA*
I
C
=0.4A, I
B
=5mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
V
I
C
=1A, I
B
=10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
0.9
V
I
C
=1A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
500
400
150
I
C
=100mA, V
CE
=2V*
I
C
=200mA, V
CE
=2V*
I
C
=400mA, V
CE
=2V*
Transition Frequency
f
T
130
MHz
I
C
=50mA, V
CE
=5V
f=50MHz
Input Capacitance
C
ibo
200
pF
V
EB
=0.5V, f=1MHz
Output Capacitance
C
obo
9
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
t
off
80
2900
ns
ns
I
C
=100mA, I
B1
=10mA
I
B2
=10mA, V
CC
=50V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
ZDT694
ZDT694
3 - 342
SM-8 DUAL NPN MEDIUM POWER
HIGH GAIN TRANSISTORS
ISSUE 1 - NOVEMBER 1995
PARTMARKING DETAIL T694
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
120
V
Collector-Emitter Voltage
V
CEO
120
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
1
A
Continuous Collector Current
I
C
0.5
A
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
Total Power Dissipation at T
amb
= 25C*
Any single die on
Both die on equally
P
tot
2.25
2.75
W
W
Derate above 25C*
Any single die on
Both die on equally
18
22
mW/ C
mW/ C
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
55.6
45.5
C/ W
C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
SM-8
(8 LEAD SOT223)
C
1
C
1
C
2
C
2
B
1
E
1
B
2
E
2
3 - 343
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
120
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
120
V
I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5
V
I
E
=100
A
Collector Cutoff Current
I
CBO
0.1
A
V
CB
=100V
Emitter Cutoff Current
I
EBO
0.1
A
V
EB
=4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
0.25
0.5
V
V
I
C
=0.1A, I
B
=0.5mA*
I
C
=0.4A, I
B
=5mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
V
I
C
=1A, I
B
=10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
0.9
V
I
C
=1A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
500
400
150
I
C
=100mA, V
CE
=2V*
I
C
=200mA, V
CE
=2V*
I
C
=400mA, V
CE
=2V*
Transition Frequency
f
T
130
MHz
I
C
=50mA, V
CE
=5V
f=50MHz
Input Capacitance
C
ibo
200
pF
V
EB
=0.5V, f=1MHz
Output Capacitance
C
obo
9
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
t
off
80
2900
ns
ns
I
C
=100mA, I
B1
=10mA
I
B2
=10mA, V
CC
=50V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
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3 - 342
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