SM-8 BIPOLAR TRANSISTOR H-BRIDGE
PRELIMINARY DATA SHEET ISSUE A MAY 1998
FEATURES
*
Compact package
*
Low on state losses
*
Low drive requirements
*
Operates up to 70V supply
*
1 Amp continuous rating
PARTMARKING DETAIL ZHB6792
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
NPNs
PNPs
UNIT
Collector-Base Voltage
V
CBO
70
-70
V
Collector-Emitter Voltage
V
CEO
70
-70
V
Emitter-Base Voltage
V
EBO
5
-5
V
Peak Pulse Current
I
CM
2
-2
A
Continuous Collector Current
I
C
1
-1
A
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150
C
SCHEMATIC DIAGRAM
CONNECTION DIAGRAM
ZHB6792
1
2
3
4
8
7
6
5
C
1,
C
2
E
1
,E
4
C
3
,C
4
B
4
B
1
B
2
E
2
,E
3
B
3
SM-8
(8 LEAD SOT223)
Q2
Q3
Q4
Q1
B1
B2
B4
B3
E2, E3
E1, E4
C1, C2
C3, C4
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
Total Power Dissipation at T
amb
= 25C*
Any single transistor "on"
Q1 and Q3 "on" or Q2 and Q4 "on" equally
P
tot
1.25
2
W
W
Derate above 25C*
Any single transistor "on"
Q1 and Q3 "on" or Q2 and Q4 "on" equally
10
16
mW/ C
mW/ C
Thermal Resistance - Junction to Ambient*
Any single transistor "on"
Q1 and Q3 "on" or Q2 and Q4 "on" equally
100
62.5
C/ W
C/ W
ZHB6792
100us
Pulse Width
Transient Thermal Resistance
0
Thermal
Resist
ance (C/
W)
D=1
D=0.2
D=0.1
D=0.05
D=0.5
Single Pulse
D=t1
tP
t1
tP
1ms
10ms 100ms
1s
10s
100s
20
40
60
80
100
Therm
al Resista
nce (C
/W)
Single Pulse
Transient Thermal Resistance
Pulse Width
t1
1ms
100us
0
10ms
tP
D=t1
tP
1s
100ms
D=0.2
D=0.05
D=0.1
10s
D=0.5
D=1
100s
10
20
30
40
50
60
T - Temperature (C)
M
a
x P
owe
r
Diss
i
p
a
t
i
o
n - (W
att
s)
0
0.5
0
20
1.5
1.0
2.0
Sing
le
Derating curve
40
60
80
100
140
120
160
Du
al
Single Transistor "On"
Q1 and Q3 or Q2 and Q4 "On"
Pd v Pcb Area Comparison
P
o
w
e
r
D
issapa
t
i
on
(W)
0.1
0.1
10
Pcb Area (inches squared)
1
10
1
Dual Transistors
Single Transistor
Dual Transistors
Single Transistor
Full Copper
Minimum
Copper
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB
with copper equal to 2 inches square.
"Two devices on" is the standard operating condition for the bridge. Eg. opposing NPN/PNP pairs
rurned on.
ZHB6792
NPN TRANSISTORS
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT TEST CONDITIONS.
BreakdownVoltages V
(BR)CBO
70
V
I
C
=100
A
V
(BR)CEO
70
V
I
C
=10mA*
V
(BR)EBO
5
V
I
E
=100
A
Cut-Off Currents
I
CBO
0.1
A
V
CB
=55V
I
EBO
0.1
A
V
EB
=4V
Saturation Voltages
V
CE(sat)
0.15
0.5
V
V
I
C
=0.1A, I
B
=0.5mA*
I
C
=1A, I
B
=10mA*
V
BE(sat)
0.9
V
I
C
=1A, I
B
=10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
0.9
V
I
C
=1A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
500
400
150
I
C
=100mA,V
CE
=2V*
I
C
=500mA, V
CE
=2V*
I
C
=1A,V
CE
=2V*
Transition Frequency
f
T
150
MHz
I
C
=50mA, V
CE
=5V, f=50MHz
Input Capacitance
C
ibo
200
pF
V
EB
=0.5V, f=1MHz
Output Capacitance
C
obo
12
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
t
off
46
1440
ns
ns
I
C
=500mA, I
B1
=50mA
I
B2
=50mA, V
CC
=10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
ZHB6792
PNP TRANSISTORS
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-75
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-70
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-0.1
A
V
CB
=-40V
Emitter Cut-Off Current
I
EBO
-0.1
A
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.45
-0.5
V
V
I
C
=-500mA, I
B
=-5mA*
I
C
=-1A, I
B
=-25mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.95
V
I
C
=-1A, I
B
=-25mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.75
V
I
C
=-1A, V
CE
=-2V*
Static Forward Current
Transfer
h
FE
300
250
200
800
I
C
=-10mA, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
Transition Frequency
f
T
100
MHz
I
C
=-50mA, V
CE
=-5V
f=50MHz
Input Capacitance
C
ibo
225
pF
V
EB
=-0.5V, f=1MHz
Output Capacitance
C
obo
22
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
t
off
35
750
ns
ns
I
C
=-500mA,
I
B1
=-50mA
I
B2
=-50mA, V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
PNP TRANSISTOR
TYPICAL CHARACTERISTICS
I
C
/I
B
=10
I
C
/I
B
=40
I
C
/I
B
=20
I
C
/I
B
=100
V
CE
=2V
I
C
/I
B
=40
V
CE
=2V
0.01
0.1
1
10
0.8
0.6
0
1.6
0.01
0.1
1
10
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
CE(s
at)
-
(V
ol
ts
)
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
C
E(sat)
-
(V
o
lts
)
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
h
FE
-
No
rma
l
i
se
d
Ga
in
V
BE
-
(V
o
lts
)
750
500
250
h
FE
-
T
ypi
ca
l
Ga
i
n
T
amb
=25C
-55C
+25C
+100C
+175C
0
+100C
+25C
-55C
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
V
BE(s
at)
-
(V
ol
ts
)
-55C
+25C
+100C
+175C
1.8
1.4
1.2
1.0
0.4
0.2
0.8
0.6
0
1.6
1.8
1.4
1.2
1.0
0.4
0.2
-55C
+25C
+100C
ZHB6792
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