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Электронный компонент: ZHCS1006

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SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE "SuperBAT"
ISSUE 1 - NOVEMBER 1997
7
FEATURES:
High current capability
Low V
F
APPLICATIONS:
Mobile telecomms, PCMIA & SCSI
DC-DC Conversion
PARTMARKING DETAILS : S16
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Continuous Reverse Voltage
V
R
60
V
Forward Current
I
F
900
mA
Forward Voltage @ I
F
= 1000mA(typ)
V
F
600
mV
Average Peak Forward Current;D.C.= 50%
I
FAV
1600
mA
Non Repetitive Forward Current t
100
s
t
10ms
I
FSM
12
5
A
A
Power Dissipation at T
amb
= 25 C
P
tot
500
mW
Storage Temperature Range
T
stg
-55 to + 150
C
Junction Temperature
T
j
125
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25 C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Reverse Breakdown
Voltage
V
(BR)R
60
80
V
I
R
= 300
A
Forward Voltage
V
F
245
275
330
395
455
510
620
280
320
390
470
530
600
740
mV
mV
mV
mV
mV
mV
mV
I
F
= 50mA*
I
F
= 100mA*
I
F
= 250mA*
I
F
= 500mA*
I
F
= 750mA*
I
F
= 1000mA*
I
F
= 1500mA*
Reverse Current
I
R
50
100
A
V
R
= 45V
Diode Capacitance
C
D
17
pF
f= 1MHz,V
R
= 25V
Reverse Recovery
Time
t
rr
12
ns
switched from
I
F
= 500mA to I
R
=
500mA
Measured at I
R
= 50mA
*Measured under pulsed conditions. Pulse width= 300
s. Duty cycle
2%
ZHCS1006
1
3
C
1
A
3
2
SOT23
0
75
125
1
10
100
0
60
0
0
60
V
F
- Forward Voltage (V)
I
F
v V
F
1m
I
F
-
F
orwa
rd
Curre
nt
(A
)
IF(a
v) - A
v
g Fwd Cur (A
)
0
TC - Case Temperature (C)
I
F(av)
v T
C
T
a
- A
mbient
T
emp (

C
)
125
75
V
R
- Reverse Voltage (V)
T
a
v V
R
I
R
- Reve
rs
e Curre
nt (A
)
1n
V
R
- Reverse Voltage (V)
I
R
v V
R
P
F
(av)
-
A
vg Pwr D
i
s
s
(
W
)
0
I
F(av)
- Avg Fwd Curr (A)
P
F(av)
v I
F(av)
C
D
-
D
iode
Capa
cita
nce

(
pF)
140
70
0
V
R
- Reverse Voltage (V)
C
D
v V
R
-55C
20
40
+25C
+125C
20
40
85
95
105
115
DC
D=0.5
D=0.2
D=0.1
D=0.05
100
p
t
1
t
1
D=t
/t
p
I
F(pk)
I
F(av)
=DxI
F(pk)
Typical
Tj=125C
F(av)
P
F(av)
=I
xV
F
0.1
0.2
0.3
0.4
0.5
0.6
10m
100m
1
10
0.4
0.8
1.2
0.2
0.4
0.6
0.2
0.4
0.6
0.8
P
I
t
1
F(pk)
=DxI
F(av)
=I
F(av)
F(av)
F
xV
F(pk)
p
t
/t
D=t
1
I
p
10n
100n
1u
10u
100u
1m
10m
100m
1
+50C
+25C
+100C
+125C
-55C
DC
D=0.5
D=0.2
D=0.1
D=0.05
Typical
Tj=125C
Rth=100C/W
Rth=200C/W
Rth=300C/W
TYPICAL CHARACTERISTICS
ZHCS1006
TYPICAL CHARACTERISTICS
ZHCS1006
TYPICAL CHARACTERISTICS
* Reference above figure, devices were mounted on a 15mmx15mm ceramic substrate.
MAXIMUM TRANSIENT THERMAL RESISTANCE