SOD323 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE "SuperBAT"
ISSUE 1- NOVEMBER 1998
7
FEATURES:
Low V
F
High Current Capability
Miniature Surface Mount Package
APPLICATIONS:
DC - DC converters
Mobile telecomms
PCMCIA
Partmark Detail - BD
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Continuous Reverse Voltage
V
R
40
V
Forward Current (Continuous)
I
F
400
mA
Forward Voltage @ I
F
=400mA
V
F
500
mV
Average Peak Forward Current; D.C. = 50%
I
FAV
1000
mA
Non Repetitive Forward Current t
100
s
t
10ms
I
FSM
6.75
3
A
A
Power Dissipation at T
amb
=25C
P
tot
250
mW
Storage Temperature Range
T
stg
-55 to +150
C
Junction Temperature
T
j
125
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Reverse Breakdown
Voltage
V
(BR)R
40
60
V
I
R
=200
A
Forward Voltage
V
F
270
300
370
425
550
640
810
440
300
350
460
500
670
780
1050
mV
mV
mV
mV
mV
mV
mV
mV
I
F
=50mA*
I
F
=100mA*
I
F
=250mA*
I
F
=400mA*
I
F
=750mA*
I
F
=1000mA*
I
F
=1500mA*
I
F
=500mA, T
amb
=100C*
Reverse Current
I
R
15
40
A
V
R
=30V
Diode Capacitance
C
D
20
pF
f=1MHz,V
R
=25V
Reverse Recovery
Time
t
rr
10
ns
switched from
I
F
= 500mA to I
R
= 500mA
Measured at I
R
= 50mA
ZHCS400
C
A
SOD323
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