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Электронный компонент: ZHCS506TA

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SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE "SuperBAT"
ISSUE 1 - September 1997
7
FEATURES:
Low V
F
High Current Capability
APPLICATIONS:
DC - DC converters
Mobile telecomms
PCMCIA
PARTMARK DETAIL: S56
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Continuous Reverse Voltage
V
R
60
V
Forward Current (Continuous)
I
F
500
mA
Forward Voltage @ I
F
= 500mA
V
F
630
mV
Average Peak Forward Current; D.C. = 50%
I
FAV
1000
mA
Non Repetitive Forward Current t
100
s
t
10ms
I
FSM
5.5
2.5
A
A
Power Dissipation at T
amb
= 25 C
P
tot
330
mW
Storage Temperature Range
T
stg
-55 to + 150
C
Junction Temperature
T
j
125
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25 C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Reverse Breakdown
Voltage
V
(BR)R
60
80
V
I
R
= 200
A
Forward Voltage
V
F
275
320
415
550
680
820
1120
565
310
360
470
630
800
960
1350
mV
mV
mV
mV
mV
mV
mV
mV
I
F
= 50mA*
I
F
= 100mA*
I
F
= 250mA*
I
F
= 500mA*
I
F
= 750mA*
I
F
= 1000mA*
I
F
= 1500mA*
I
F
= 500mA, T
amb
= 100 C*
Reverse Current
I
R
20
40
A
V
R
= 45V
Diode Capacitance
C
D
20
pF
f= 1MHz,V
R
= 25V
Reverse Recovery
Time
t
rr
10
ns
switched from
I
F
= 500mA to I
R
= 500mA
Measured at I
R
= 50mA
*Measured under pulsed conditions. Pulse width= 300
s; duty cycle
2% .
ZHCS506
1
3
C
1
A
3
2
SOT23
0
1
10
100
0
60
0
0
V
F
- Forward Voltage (V)
I
F v
V
F
1m
I
F
-
Forward
C
urrent
(A
)
I
F(a
v)
-
A
v
g

Fwd Cur (
A
)
0
T
C
- Case Temperature (C)
I
F(av)
v T
C
T
a
-
Amb
ient
T
e
m
p

(

C)
125
65
V
R
- Reverse Voltage (V)
T
a v
V
R
I
R
-
Revers
e
Current
(A)
10n
V
R
- Reverse Voltage (V)
I
R v
V
R
PF(av
)
- A
vg Pwr
Di
s
s

(W)
0
IF(av) - Avg Fwd Curr (A)
PF(av) v IF(av)
C
D
-
Dio
de
Capacitance
(pF
)
90
0
V
R
- Reverse Voltage (V)
C
D v
V
R
-55C
20
40
+25C
+125C
DC
D=0.5
95
p
t
1
t
1
D=t
/t
p
I
F(pk)
I
F(av)
=DxI
F(pk)
Tj=125C
F(av)
P
F(av)
=I
xV
F
0.1
0.2
0.3
0.4
0.5
0.6
P
I
t
1
F(pk)
=DxI
F(av)
=I
F(av)
F(av)
F
xV
F(pk)
p
t
/t
D=t
1
I
p
10
20
30
40
50
60
100n
1u
10u
100u
1m
10m
+25C
+50C
-55C
+100C
+125C
D=0.1
DC
D=0.5
D=0.2
D=0.1
D=0.05
Rth=100C/W
Rth=200C/W
Rth=300C/W
10
30
50
50
10m
100m
1
0.6
0.2
0.4
75
85
95
105
115
125
0.1
0.2
0.3
0.4
0.1
0.2
0.3
0.4
0.5
0.6
D=0.2
D=0.05
ZHCS506
TYPICAL CHARACTERISTICS
ZHCS506
Pulse Width (s)
R
THj-a (
C/W
)
0
100u
t
p
p
1
1
/t
D=t
t
1m
10m
100m
1
10
100
100
200
300
Single Pulse
D=0.2
D=0.1
D=0.05
D=0.5
D=1