SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE "SuperBAT"
ISSUE 2 - October 1997
7
FEATURES:
*
Low V
F
*
High Current Capability
APPLICATIONS:
*
DC - DC converters
*
Mobile telecomms
*
PCMCIA
PARTMARK DETAIL: ZS7
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Continuous Reverse Voltage
V
R
40
V
Forward Current (Continuous)
I
F
750
mA
Forward Voltage @ I
F
= 750mA
V
F
490
mV
Average Peak Forward Current; D.C. = 50%
I
FAV
1500
mA
Non Repetitive Forward Current t
100
s
t
10ms
I
FSM
12
5.2
A
A
Power Dissipation at T
amb
= 25 C
P
tot
500
mW
Storage Temperature Range
T
stg
-55 to + 150
C
Junction Temperature
T
j
125
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25 C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Reverse Breakdown
Voltage
V
(BR)R
40
60
V
I
R
= 300
A
Forward Voltage
V
F
225
235
290
340
390
440
530
280
310
350
420
490
540
650
mV
mV
mV
mV
mV
mV
mV
I
F
= 50mA*
I
F
= 100mA*
I
F
= 250mA*
I
F
= 500mA*
I
F
= 750mA*
I
F
= 1000mA*
I
F
= 1500mA*
Reverse Current
I
R
50
100
A
V
R
= 30V
Diode Capacitance
C
D
25
pF
f= 1MHz,V
R
= 25V
Reverse Recovery
Time
t
rr
12
ns
switched from
I
F
= 500mA to I
R
= 500mA
Measured at I
R
= 50mA
*Measured under pulsed conditions. Pulse width= 300
s; duty cycle
2% .
ZHCS750
1
3
C
1
A
3
2
SOT23
* Reference above figure, devices were mounted on a 15mmx15mm ceramic substrate.
MAXIMUM TRANSIENT THERMAL RESISTANCE
TYPICAL CHARACTERISTICS
ZHCS750