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Электронный компонент: ZHCS750/TA

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SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE "SuperBAT"
ISSUE 2 - October 1997
7
FEATURES:
*
Low V
F
*
High Current Capability
APPLICATIONS:
*
DC - DC converters
*
Mobile telecomms
*
PCMCIA
PARTMARK DETAIL: ZS7
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Continuous Reverse Voltage
V
R
40
V
Forward Current (Continuous)
I
F
750
mA
Forward Voltage @ I
F
= 750mA
V
F
490
mV
Average Peak Forward Current; D.C. = 50%
I
FAV
1500
mA
Non Repetitive Forward Current t
100
s
t
10ms
I
FSM
12
5.2
A
A
Power Dissipation at T
amb
= 25 C
P
tot
500
mW
Storage Temperature Range
T
stg
-55 to + 150
C
Junction Temperature
T
j
125
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25 C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Reverse Breakdown
Voltage
V
(BR)R
40
60
V
I
R
= 300
A
Forward Voltage
V
F
225
235
290
340
390
440
530
280
310
350
420
490
540
650
mV
mV
mV
mV
mV
mV
mV
I
F
= 50mA*
I
F
= 100mA*
I
F
= 250mA*
I
F
= 500mA*
I
F
= 750mA*
I
F
= 1000mA*
I
F
= 1500mA*
Reverse Current
I
R
50
100
A
V
R
= 30V
Diode Capacitance
C
D
25
pF
f= 1MHz,V
R
= 25V
Reverse Recovery
Time
t
rr
12
ns
switched from
I
F
= 500mA to I
R
= 500mA
Measured at I
R
= 50mA
*Measured under pulsed conditions. Pulse width= 300
s; duty cycle
2% .
ZHCS750
1
3
C
1
A
3
2
SOT23
75
125
1
10
100
0
30
1.2
0
0
30
V
F
- Forward Voltage (V)
I
F
v V
F
0.01
10
I
F
-
F
o
rward Curr
e
n
t

(A)
I
F
(av
)
A
verage
Fo
rward
C
u
r
rent

(A
)
1.2
0
TC - Case Temperature (C)
I
F(av)
v T
C
T
a
- Am
b
i
ent T
e
m
p
(
C)
125
75
V
R
- Reverse Voltage (V)
T
a
v V
R
+50C
+25C
I
R
-
R
ever
se
Curr
e
n
t

(A)
+100C
10n
V
R
- Reverse Voltage (V)
I
R
v V
R
P
F
(av
)
A
verage
P
o
w
er
Dissip
a
t
i
o
n

(
m
W)
0.5
0
I
F(av)
Average Forward Current (A)
P
F(av)
v I
F(av)
C
D
- D
i
ode Capacitan
c
e
(pF)
200
100
0
V
R
- Reverse Voltage (V)
C
D
v V
R
R
th
=100 C/W
-55C
+125C
10
20
+25C
+125C
0.1
1
0
0.4
0.8
0.2
0.6
10
20
-55C
0.4
0.8
85
95
105
115
DC
D=0.5
D=0.2
D=0.1
D=0.05
DC
D=0.5
D=0.2
D=0.1
D=0.05
0.4
0.3
0.2
0.1
0.4
0.8
R
th
=200C/W
R
th
=300 C/W
100
100n
1
10
100
1m
10m
100m
Typical
Typical
Tj=125C
Typical
TYPICAL CHARACTERISTICS
Typical
p
t
1
t
1
D=t /t
p
I
F(pk)
I
F(av)
=D x I
F(pk)
F(av)
P
F(av)
=I
x V
F
p
t
1
t
1
D=t /t
p
I
F(pk)
I
F(av)
=D x I
F(pk)
ZHCS750
* Reference above figure, devices were mounted on a 15mmx15mm ceramic substrate.
MAXIMUM TRANSIENT THERMAL RESISTANCE
TYPICAL CHARACTERISTICS
ZHCS750