SUMMARY
Schottky Diode V
R
= 40V; I
F
= 1.16A; I
R
= 20 A
DESCRIPTION
This compact SOT23 packaged Schottky diode offers users an excellent performance
combination comprising high current operation, extremely low leakage and low
forward voltage ensuring suitability for applications requiring efficient operation at
higher temperatures ( above 85 C) see Operational Efficiency chart on page 4.
Key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area savings
FEATURES
Low Equivalent On Resistance
Extremely Low Leakage (20 A @30V)
High current capability (I
F
= 1.16A)
Low V
F
, Fast switching Schottky
SOT23 Package
ZLLS1000 complements low temperature equivalent ZHCS1000
Package thermally rated to 150 C
APPLICATIONS
DC - DC Converters
Strobes
Mobile Phones
Charging Circuits
Motor control
DEVICE MARKING
L10
ZLLS1000
ISSUE 1 - JANUARY 2002
1
40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE
DEVICE
REEL
(inches)
TAPE WIDTH
(mm)
QUANTITY
PER REEL
ZLLS1000TA
7
8mm embossed
3000 units
ZLLS1000TC
13
8mm embossed
10000 units
ORDERING INFORMATION
Top view
ZLLS1000
ISSUE 1 - JANUARY 2002
2
PARAMETER
SYMBOL
VALUE
UNIT
Schottky Diode
Continuous Reverse Voltage
V
R
40
V
Forward Current
I
F
1.16
A
Peak Repetitive Forward Current
Rectangular Pulse Duty Cycle
I
FPK
1.88
A
Non Repetitive Forward Current
t=
100 s
t=
10ms
I
FSM
22
6.4
A
A
Package
Power Dissipation at T
amb
=25 C
single die continuous
single die measured at t<5 secs
P
D
625
840
mW
mW
Storage Temperature Range
T
stg
-55 to +150
C
Junction Temperature
Tj
150
C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
JA
200
C/W
Junction to Ambient (b)
R
JA
149
C/W
THERMAL RESISTANCE
Notes
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t<5secs.
ZLLS1000
ISSUE 1 - JANUARY 2002
3
TYPICAL CHARACTERISTICS
Operational Efficiency chart
The operational efficiency chart indicates the beneficial use of the ZLLS Series diodes in applications requiring
higher voltage, higher temperature operation. Circuits requiring Low voltage Low temperature operation will
benefit from using Zetex low V
F
ZHCS Series diodes.
ZLLS1000
ISSUE 1 - JANUARY 2002
4
SCHOTTKY DIODE CHARACTERISTICS
Reverse Breakdown Voltage
V
(BR)R
40
V
I
R
=500A
Forward Voltage
V
F
285
314
368
428
478
520
610
492
310
340
390
460
510
560
660
mV
mV
mV
mV
mV
mV
mV
mV
I
F
=50 mA*
I
F
=100 mA*
I
F
=250mA*
I
F
=400mA*
I
F
=750mA*
I
F
=1000mA*
I
F
=1500mA*
I
F
=1000mA*,Ta = 100 C
Reverse Current
I
R
11
750
20
A
A
V
R
=30V
V
R
=30V,Ta = 85 C
Diode Capacitance
C
D
31
pF
f=1MHz,VR=30V
Reverse Recovery Time
Reverse Recovery Charge
t
rr
Q
rr
2.58
1.45
ns
nC
Switched from I
F
= 500mA
to V
R
= 5V. Measured @ I
R
50mA.
di / d t > 1A / ns.
Rsource = 6 ohm.
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
*Measured under pulsed conditions.
ZLLS1000
ISSUE 1 - JANUARY 2002
5
TYPICAL CHARACTERISTICS
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