S E M I C O N D U C T O R S
SUMMARY
V
R
= 40V; I
FAV
= 650mA;
V
F
= 570mV typ @ 100mA; I
R
= 1A typ @ 30V
DESCRIPTION
Packaged in the SOD523 package this addition to the Zetex Low Leakage
Schottky diode range offers an ideal low VF/IR performance combined with a
low package height of 0.9mm making the device suitable for various
converter, charger, and LED driver circuits.
FEATURES
Low VF
380mA continuous current rating
Low profile SOD523 package (0.9mm)
APPLICATIONS
DC - DC converters
Mobile telecomms
Charger circuits
LED driver circuits
MOSFET voltage protection circuits
DEVICE MARKING
53
ZLLS350
ISSUE 1 - MAY 2005
SOD523 40V LOW LEAKAGE SCHOTTKY BARRIER DIODE
1
SOD523
PINOUT
TOP VIEW
DEVICE
REEL
SIZE
TAPE WIDTH
QUANTITY PER
REEL
ZLLS350TA
7"
8mm
embossed
3,000 units
ZLLS350TC
13"
8mm
embossed
10,000 units
ORDERING INFORMATION
ZLLS350
S E M I C O N D U C T O R S
ISSUE 1 - MAY 2005
2
PARAMETER
SYMBOL
LIMIT
UNIT
Continuous reverse voltage
V
R
40
V
Continuous forward current
I
F
380
mA
Average peak forward current; D.C. = 50%
I
FAV
650
mA
Non repetitive forward current t < 100 S
< 10mS
I
FSM
6.0
1.3
A
A
Power dissipation at T
A
=25C
(a)
P
D
357
mW
Power dissipation at T
A
=25C
(b)
P
D
413
mW
Operating and storage temperature range
T
stg
-55 to +150
C
Junction temperature
T
j
150
C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to ambient
(a)
R
JA
350
C/W
Junction to ambient
(b)
R
JA
303
C/W
NOTES:
(a) For a single device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of 1oz copper in still air conditions.
(b) As (a) above measured at t<5 secs.
THERMAL RESISTANCE
ZLLS350
S E M I C O N D U C T O R S
ISSUE 1 - MAY 2005
3
CHARACTERISTICS
ZLLS350
S E M I C O N D U C T O R S
ISSUE 1 - MAY 2005
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
Reverse breakdown voltage
V
(BR)R
40
63
V
I
R
=100 A
Forward voltage
V
F
380
425
520
780
450
520
635
1000
mV
mV
mV
mV
I
F
=30mA*
I
F
=50mA*
I
F
=100mA*
I
F
=275mA*
Reverse current
I
R
1
4
A
V
R
=30V
Diode capacitance
C
D
3.5
6
pF
f=1MHz; V
R
=30V
Reverse recovery time
t
rr
1
nS
Switched from
I
F
=100mA, to I
R
=100mA
Measured at I
R
=10mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
* Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
ZLLS350
S E M I C O N D U C T O R S
ISSUE 1 - MAY 2005
5
CHARACTERISTICS
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