SUMMARY
Schottky Diode V
R
= 40V; I
F
= 0.52A; I
R
= 10mA
DESCRIPTION
This compact SOD323 packaged Schottky diode offers users an excellent
performance combination comprising high current operation, extremely low
leakage and low forward voltage ensuring suitability for applications requiring
efficient operation at higher temperatures ( above 85 C) see Operational Efficiency
chart on page 4.
key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area savings
FEATURES
Low Equivalent On Resistance
Extremely Low Leakage (10 A @30V)
High current capability (I
F
= 0.52A)
Low VF, Fast switching Schottky
SOD323 Package
ZLLS400 complements low temperature equivalent ZHCS400
Package thermally rated to 150 C
APPLICATIONS
DC - DC Converters
Mobile Phones
Charging Circuits
Motor control
DEVICE MARKING
40
ZLLS400
ISSUE 1 - JANUARY 2002
1
40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE
DEVICE
REEL
(inches)
TAPE WIDTH
(mm)
QUANTITY
PER REEL
ZLLS400TA
7
8mm embossed 3000 units
ZLLS400TC
13
8mm embossed 10000 units
ORDERING INFORMATION
Top view
ZLLS400
ISSUE 1 - JANUARY 2002
2
PARAMETER
SYMBOL
VALUE
UNIT
Schottky Diode
Continuous Reverse Voltage
V
R
40
V
Forward Current
I
F
0.52
A
Peak Repetitive Forward Current
Rectangular Pulse Duty Cycle
I
FPK
0.85
A
Non Repetitive Forward Current
t=
100 s
t=
10ms
I
FSM
12
2.5
A
A
Package
Power Dissipation at T
amb
=25 C
single die continuous
single die measured at t<5 secs
P
D
330
390
mW
mW
Storage Temperature Range
T
stg
-55 to +150
C
Junction Temperature
Tj
150
C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
JA
379
C/W
Junction to Ambient (b)
R
JA
317
C/W
THERMAL RESISTANCE
Notes
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t<5secs.
ZLLS400
ISSUE 1 - JANUARY 2002
3
TYPICAL CHARACTERISTICS
4
Operational Efficiency chart
The operational efficiency chart indicates the beneficial use of the ZLLS Series diodes in applications requiring
higher voltage, higher temperature operation. Circuits requiring Low voltage Low temperature operation will
benefit from using Zetex low V
F
ZHCS Series diodes.
ZLLS400
ISSUE 1 - JANUARY 2002
SCHOTTKY DIODE CHARACTERISTICS
Reverse Breakdown Voltage
V
(BR)R
40
V
I
R
=500A
Forward Voltage
V
F
310
350
425
520
610
690
860
494
350
400
520
610
850
1000
1300
mV
mV
mV
mV
mV
mV
mV
mV
I
F
=50 mA*
I
F
=100 mA*
I
F
=250mA*
I
F
=400mA*
I
F
=750mA*
I
F
=1000mA*
I
F
=1500mA*
I
F
=500mA*,Ta = 100 C
Reverse Current
I
R
5.5
370
10
A
mA
V
R
=30V
V
R
=30V,Ta = 85 C
Diode Capacitance
C
D
15.5
pF
f=1MHz,VR=30V
Reverse Recovery Time
Reverse Recovery Charge
t
rr
Q
rr
2.46
1.38
ns
nC
Switched from I
F
= 500mA
to V
R
= 5V. Measured @ I
R
50mA.
di / d t > 1A / ns.
Rsource = 6 ohm.
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
*Measured under pulsed conditions.
ZLLS400
ISSUE 1 - JANUARY 2002
5
TYPICAL CHARACTERISTICS
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