SOD323 SILICON VARIABLE
CAPACITANCE DIODES
ISSUE 1 NOVEMBER 1998
FEATURES
*
Close Tolerance C-V Characteristics
*
High Tuning Ratio
*
Low I
R
Enabling Excellent Phase Noise Performance
(I
R
Typically <200pA at 25V)
*
Miniature surface mount package
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
MAX
UNIT
Forward Current
I
F
200
mA
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
=25C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
CONDITIONS
Reverse Breakdown
Voltage
V
BR
25
V
I
R
=10
A
Reverse Voltage Leakage
I
R
0.2
20
nA
V
R
=20V
Temperature Coefficient
of Capacitance
300
400
ppm/C V
R
=3V, f=1MHz
TUNING CHARACTERISTICS (at T
amb
=25C)
PART NO
Nominal Capacitance (pF)
V
R
=2V, f=1MHz
Minimum
Q
@ V
R
=3V
f=50MHz
Capacitance Ratio
C
2
/ C
20
at f=1MHz
MIN
NOM
MAX
MIN
MAX
ZMV829A
7.38
8.2
9.02
250
4.3
5.8
ZMV830A
9.0
10.0
11.0
300
4.5
6.0
ZMV831A
13.5
15.0
16.5
300
4.5
6.0
ZMV832A
19.8
22.0
24.2
200
5.0
6.5
ZMV833A
29.7
33.0
36.3
200
5.0
6.5
ZMV834A
42.3
47.0
51.7
200
5.0
6.5
ZMV835A
61.2
68.0
74.8
100
5.0
6.5
Note:
No suffix
20% (e.g. ZMV830), suffix B
5% (e.g. ZMV830B)
Spice parameter data is available upon request for these devices
C
A
SOD323
1
3
ZMV829/A/B
to
ZMV835/A/B
PDF 
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