Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries)
Facsimile: (44)161-627 5467
Zetex GmbH
Zetex Inc.
Zetex (Asia) Ltd.
These are supported by
Streitfeldstrae 19
87 Modular Avenue
3510 Metroplaza, Tower 2
agents and distributors in
D-81673 Mnchen
Commack NY11725
Hing Fong Road, Kwai Fong
major countries world-wide
Telefon: (49) 89 45 49 49 0
Telephone: (516) 543-7100
Telephone:(852) 26100 611
Zetex plc 1995
Fax: (49) 89 45 49 49 49
Fax: (516) 864-7630
Fax: (852) 24250 494
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.
Transient Thermal Resistance
Pulse Width
0.1ms
20
60
100
140
180
1ms
10ms 100ms
10s
100s
1s
160
120
80
40
0
D=1(D.C)
D=0.2
D=0.1
D=0.05
D=0.5
t1
tp
D=t1
tp
Single Pulse
Derating curve
T -Temperature
(C)
M
a
x
P
ower D
i
ssi
p
ati
on
- (Wa
tt
s)
-40
0.50
0.25
1.0
0.75
0
40
80
120
200
160
Amb
ient
tem
perat
ure
SPICE PARAMETERS
*ZETEX ZTX1048A Spice model Last revision 20/01/95
*
.MODEL ZTX1048A NPN IS=13.73E-13 NF=1.0 BF=550 IKF=8.0 VAF=120
+ ISE=2.6E-13 NE=1.38 NR=1.0 BR=300 IKR=6 VAR=15
+ ISC=1.6E-12 NC=1.4 RB=0.1 RE=0.022 RC=0.010
+ CJC=136E-12 CJE=559.1E-12 MJC=0.267 MJE=0.299
+ VJC=0.420 VJE=0.533 TF=600E-12 TR=3E-9
*
1995 ZETEX PLC
The copyright in this model and the design embodied belong to Zetex PLC (Zetex). It is supplied
free of charge by Zetex for the purpose of research and design and may be used or copied intact
(including this notice) for that purpose only. All other rights are reserved. The model is believed
accurate but no condition or warranty as to its merchantability or fitness for purpose is given and
no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 FEBRUARY 1995
FEATURES
* V
CEV
=50V
* Very Low Saturation Voltages
* High Gain
* 20 Amps pulse current
APPLICATIONS
* LCD Backlight Convertors
* Emergency Lighting
* DC-DC Convertors
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX1048A
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
17.5
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
20
A
Continuous Collector Current
I
C
4
A
Base Current
I
B
500
mA
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +200
C
ZTX1048A
C
B
E
E-Line
TO92 Compatible
ZTX1048A
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 2 - JANUARY 1995
Full characterised data now available
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX1048A
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
17.5
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
20
A
Continuous Collector Current
I
C
4
A
Base Current
I
B
500
mA
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +200
C
ZTX1048A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
ZTX1048A
UNIT
CONDITIONS.
MIN.
TYP.
MAX.
Collector-Base Breakdown
Voltage
V
(BR)CBO
50
85
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
CES
50
85
V
IC=100
A
Collector-Emitter
Breakdown Voltage
V
CEO
17.5
24
V
IC=10mA
Collector-Emitter
Breakdown Voltage
V
CEV
50
85
V
IC=100
A, V
EB
=1V
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5
8.7
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
0.3
10
nA
V
CB
=35V
Emitter Cut-Off Current
I
EBO
0.3
10
nA
V
EB
=4V
Collector Emitter Cut-Off
Current
I
CES
0.3
10
nA
VCES=35V
Collector-Emitter Saturation
Voltage
V
CE(sat)
27
55
110
210
45
75
150
245
mV
mV
mV
mV
I
C
=0.5A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=10mA*
I
C
=4A, I
B
=20mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
860
950
mV
I
C
=4A, I
B
=20mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
860
950
mV
IC=4A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
280
300
300
220
50
440
450
450
330
80
1200
I
C
=10mA, V
CE
=2V*
I
C
=0.5A, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=4A, V
CE
=2V*
I
C
=20A, V
CE
=2V*
Transition Frequency
f
T
150
MHz
I
C
=50mA, V
CE
=10V
f=50MHz
Output Capacitance
C
obo
60
80
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
130
ns
I
C
=4A, I
B
=40mA, V
CC
=10V
t
off
180
ns
I
C
=4A, I
B
=
40mA, V
CC
=10V
ZTX1048A
C
B
E
E-Line
TO92 Compatible
3-337
3-338
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
50
85
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
CES
50
85
V
IC=100
A
Collector-Emitter
Breakdown Voltage
V
CEO
17.5
24
V
IC=10mA
Collector-Emitter
Breakdown Voltage
V
CEV
50
85
V
IC=100
A, V
EB
=1V
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5
8.7
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
0.3
10
nA
V
CB
=35V
Emitter Cut-Off Current
I
EBO
0.3
10
nA
V
EB
=4V
Collector Emitter Cut-Off
Current
I
CES
0.3
10
nA
VCES=35V
Collector-Emitter Saturation
Voltage
V
CE(sat)
27
55
110
210
45
75
150
245
mV
mV
mV
mV
I
C
=0.5A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=10mA*
I
C
=4A, I
B
=20mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
860
950
mV
I
C
=4A, I
B
=20mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
860
950
mV
IC=4A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
280
300
300
220
50
440
450
450
330
80
1200
I
C
=10mA, V
CE
=2V*
I
C
=0.5A, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=4A, V
CE
=2V*
I
C
=20A, V
CE
=2V*
Transition Frequency
f
T
150
MHz
I
C
=50mA, V
CE
=10V
f=50MHz
Output Capacitance
C
obo
60
80
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
120
ns
I
C
=4A, I
B
=40mA, V
CC
=10V
t
off
250
ns
I
C
=4A, I
B
=
40mA, V
CC
=10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
ZTX1048A
ZTX1048A
10mV
100mV
1V
10V
100V
0.01
0.1
1
10
100
I
C
-Collector Current
I
C
-Collector Current
I
C
-Collector Current
I
C
-Collector Current
I
C
-Collector Current
h
FE
v I
C
V
BE(sat)
v Ic
V
BE(on)
v I
C
V
CE(sat)
v I
C
V
CE(sat)
v I
C
V
CE
- Collector Voltage
Safe Operating Area
Single Pulse Test Tamb=25C
DC
1s
100ms
10ms
1ms
100us
TYPICAL CHARACTERISTICS
1mA 10mA 100mA
1A
10A
10mA
1mA
100mA
1A
10A
10mA
1mA
100mA
1A
10A
10mA
1mA
100mA
1A
10A
10mA
1mA
100mA
1A
10A
100
200
300
400
500
600
700
0.2
0.4
0.6
0.8
1.0
1.2
0.8
0.6
0.4
0.2
0.2
0.4
0.6
0.8
1.0
0.8
0.6
0.4
0.2
1.4
1.2
100A
100A
100A
100A
100A
+25C
I
C
/I
B
=50
I
C
/I
B
=100
I
C
/I
B
=200
I
C
/I
B
=100
+100C
+175C
+25C
-55C
I
C
/I
B
=100
+25C
-55C
+175C
+100C
V
CE
=2V
+25C
+100C
-55C
V
CE
=2V
+25C
-55C
+175C
+100C
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries)
Facsimile: (44)161-627 5467
Zetex GmbH
Zetex Inc.
Zetex (Asia) Ltd.
These are supported by
Streitfeldstrae 19
87 Modular Avenue
3510 Metroplaza, Tower 2
agents and distributors in
D-81673 Mnchen
Commack NY11725
Hing Fong Road, Kwai Fong
major countries world-wide
Telefon: (49) 89 45 49 49 0
Telephone: (516) 543-7100
Telephone:(852) 26100 611
Zetex plc 1995
Fax: (49) 89 45 49 49 49
Fax: (516) 864-7630
Fax: (852) 24250 494
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.
Transient Thermal Resistance
Pulse Width
0.1ms
20
60
100
140
180
1ms
10ms 100ms
10s
100s
1s
160
120
80
40
0
D=1(D.C)
D=0.2
D=0.1
D=0.05
D=0.5
t1
tp
D=t1
tp
Single Pulse
Derating curve
T -Temperature
(C)
M
a
x
P
ower D
i
ssi
p
ati
on
- (Wa
tt
s)
-40
0.50
0.25
1.0
0.75
0
40
80
120
200
160
Amb
ient
tem
perat
ure
SPICE PARAMETERS
*ZETEX ZTX1048A Spice model Last revision 20/01/95
*
.MODEL ZTX1048A NPN IS=13.73E-13 NF=1.0 BF=550 IKF=8.0 VAF=120
+ ISE=2.6E-13 NE=1.38 NR=1.0 BR=300 IKR=6 VAR=15
+ ISC=1.6E-12 NC=1.4 RB=0.1 RE=0.022 RC=0.010
+ CJC=136E-12 CJE=559.1E-12 MJC=0.267 MJE=0.299
+ VJC=0.420 VJE=0.533 TF=600E-12 TR=3E-9
*
1995 ZETEX PLC
The copyright in this model and the design embodied belong to Zetex PLC (Zetex). It is supplied
free of charge by Zetex for the purpose of research and design and may be used or copied intact
(including this notice) for that purpose only. All other rights are reserved. The model is believed
accurate but no condition or warranty as to its merchantability or fitness for purpose is given and
no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 FEBRUARY 1995
FEATURES
* V
CEV
=50V
* Very Low Saturation Voltages
* High Gain
* 20 Amps pulse current
APPLICATIONS
* LCD Backlight Convertors
* Emergency Lighting
* DC-DC Convertors
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX1048A
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
17.5
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
20
A
Continuous Collector Current
I
C
4
A
Base Current
I
B
500
mA
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +200
C
ZTX1048A
C
B
E
E-Line
TO92 Compatible
ZTX1048A
PDF 
ZIP