Zetex
plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries)
Facsimile: (44)161-627 5467
Zetex GmbH
Zetex Inc.
Zetex (Asia) Ltd.
These are supported by
Streitfeldstrae 19
87 Modular Avenue
3510 Metroplaza, Tower 2
agents and distributors in
D-81673 Mnchen
Commack NY11725
Hing Fong Road, Kwai Fong
major countries world-wide
Telefon: (49) 89 45 49 49 0
Telephone: (516) 543-7100
Telephone:(852) 26100 611
Zetex plc 1995
Fax: (49) 89 45 49 49 49
Fax: (516) 864-7630
Fax: (852) 24250 494
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.
Transient Thermal Resistance
Pulse Width
0.1ms
20
60
100
140
180
1ms
10ms 100ms
10s
100s
1s
160
120
80
40
0
D=1(D.C)
D=0.2
D=0.1
D=0.05
D=0.5
t1
tp
D=t1
tp
Single Pulse
Derating curve
T -Temperature
(C)
M
a
x
P
ower D
i
ssi
p
ati
on
- (Wa
tt
s)
-40
0.50
0.25
1.0
0.75
0
40
80
120
200
160
Amb
ient
tem
perat
ure
SPICE PARAMETERS
*ZETEX ZTX1053A Spice model Last revision 19/01/95
*
.MODEL ZTX1053A NPN IS=2.1E-12 NF=1.0 BF=600 IKF=2.2 VAF=100
+ ISE=0.9E-13 NE=1.25 NR=0.99 BR=150 IKR=2.5 VAR=15
+ ISC=5.0E-10 NC=1.76 RB=0.1 RE=0.028 RC=0.016
+ CJC=75.1E-12 CJE=520E-12 MJC=0.415 MJE=0.367
+ VJC=0.512 VJE=0.766 TF=550E-12 TR=22E-9
*
1995 ZETEX PLC
The copyright in this model and the design embodied belong to Zetex PLC (Zetex). It is supplied
free of charge by Zetex for the purpose of research and design and may be used or copied intact
(including this notice) for that purpose only. All other rights are reserved. The model is believed
accurate but no condition or warranty as to its merchantability or fitness for purpose is given and
no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 JANUARY 1995
FEATURES
* V
CEO
=75V
* 3 Amp Continuous Current
* 10 Amp Pulse Current
* Very Low Saturation Voltage
APPLICATIONS
* Automotive Switching Circuits
* DC-DC Convertors
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX1053A
UNIT
Collector-Base Voltage
V
CBO
150
V
Collector-Emitter Voltage
V
CEO
75
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
10
A
Continuous Collector Current
I
C
3
A
Base Current
I
B
500
mA
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +200
C
ZTX1053A
C
B
E
E-Line
TO92 Compatible
ZTX1053A
ZTX1053A
ZTX1053A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
150
245
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
CES
150
245
V
IC=100
A
Collector-Emitter
Breakdown Voltage
V
CEO
75
100
V
IC=10mA
Collector-Emitter
Breakdown Voltage
V
CEV
150
245
V
IC=100
A, V
EB
=1V
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
8.8
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
0.3
10
nA
V
CB
=120V
Emitter Cut-Off Current
I
EBO
0.3
10
nA
V
EB
=4V
Collector Emitter Cut-Off
Current
I
CES
0.3
10
nA
VCES=120V
Collector-Emitter Saturation
Voltage
V
CE(sat)
17
120
180
25
150
250
mV
mV
mV
I
C
=0.2A, I
B
=20mA*
I
C
=1A, I
B
=10mA*
I
C
=3A, I
B
=100mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
900
1000
mV
I
C
=3A, I
B
=100mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
825
950
mV
IC=3A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
260
300
100
420
450
150
15
1200
I
C
=10mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
Transition Frequency
f
T
140
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
21
30
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
90
ns
I
C
=2A, I
B
=20mA, V
CC
=50V
t
off
750
ns
I
C
=2A, I
B
=
20mA, V
CC
=50V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
1mA
1mA
10mA
1mA
100mA
1A
10A
10mA
1mA
100mA
1A
10A
10mA
1mA
100mA
1A
10A
+25C
+100C
-55C
+25C
-55C
+175C
+100C
100
200
300
400
500
600
700
0.2
0.4
0.6
0.8
1.0
0.8
0.6
0.4
0.2
0.2
0.4
0.6
0.8
1.0
0.8
0.6
0.4
0.2
1.2
10A
1A
100mA
10mA
10mA
100mA
1A
10A
100V
10V
0.1V
1V
10
0.1
0.01
1
I
C
-Collector Current
h
FE
v I
C
V
BE(sat)
v Ic
V
BE(on)
v I
C
V
CE(sat)
v I
C
I
C
-Collector Current
V
CE(sat)
v I
C
I
C
-Collector Current
I
C
-Collector Current
Single Pulse Test Tamb=25C
V
CE
- Collector Voltage
I
C
-Collector Current
Safe Operating Area
+25C
I
C
/I
B
=10
I
C
/I
B
=30
I
C
/I
B
=100
I
C
/I
B
=30
+100C
+175C
+25C
-55C
I
C
/I
B
=30
V
CE
=2V
V
CE
=2V
DC
1s
100ms
10ms
1ms
100us
+175C
+100C
+25C
-55C
TYPICAL CHARACTERISTICS
ZTX1053A
ZTX1053A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
150
245
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
CES
150
245
V
IC=100
A
Collector-Emitter
Breakdown Voltage
V
CEO
75
100
V
IC=10mA
Collector-Emitter
Breakdown Voltage
V
CEV
150
245
V
IC=100
A, V
EB
=1V
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
8.8
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
0.3
10
nA
V
CB
=120V
Emitter Cut-Off Current
I
EBO
0.3
10
nA
V
EB
=4V
Collector Emitter Cut-Off
Current
I
CES
0.3
10
nA
VCES=120V
Collector-Emitter Saturation
Voltage
V
CE(sat)
17
120
180
25
150
250
mV
mV
mV
I
C
=0.2A, I
B
=20mA*
I
C
=1A, I
B
=10mA*
I
C
=3A, I
B
=100mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
900
1000
mV
I
C
=3A, I
B
=100mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
825
950
mV
IC=3A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
260
300
100
420
450
150
15
1200
I
C
=10mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
Transition Frequency
f
T
140
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
21
30
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
90
ns
I
C
=2A, I
B
=20mA, V
CC
=50V
t
off
750
ns
I
C
=2A, I
B
=
20mA, V
CC
=50V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
1mA
1mA
10mA
1mA
100mA
1A
10A
10mA
1mA
100mA
1A
10A
10mA
1mA
100mA
1A
10A
+25C
+100C
-55C
+25C
-55C
+175C
+100C
100
200
300
400
500
600
700
0.2
0.4
0.6
0.8
1.0
0.8
0.6
0.4
0.2
0.2
0.4
0.6
0.8
1.0
0.8
0.6
0.4
0.2
1.2
10A
1A
100mA
10mA
10mA
100mA
1A
10A
100V
10V
0.1V
1V
10
0.1
0.01
1
I
C
-Collector Current
h
FE
v I
C
V
BE(sat)
v Ic
V
BE(on)
v I
C
V
CE(sat)
v I
C
I
C
-Collector Current
V
CE(sat)
v I
C
I
C
-Collector Current
I
C
-Collector Current
Single Pulse Test Tamb=25C
V
CE
- Collector Voltage
I
C
-Collector Current
Safe Operating Area
+25C
I
C
/I
B
=10
I
C
/I
B
=30
I
C
/I
B
=100
I
C
/I
B
=30
+100C
+175C
+25C
-55C
I
C
/I
B
=30
V
CE
=2V
V
CE
=2V
DC
1s
100ms
10ms
1ms
100us
+175C
+100C
+25C
-55C
TYPICAL CHARACTERISTICS
Zetex
plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries)
Facsimile: (44)161-627 5467
Zetex GmbH
Zetex Inc.
Zetex (Asia) Ltd.
These are supported by
Streitfeldstrae 19
87 Modular Avenue
3510 Metroplaza, Tower 2
agents and distributors in
D-81673 Mnchen
Commack NY11725
Hing Fong Road, Kwai Fong
major countries world-wide
Telefon: (49) 89 45 49 49 0
Telephone: (516) 543-7100
Telephone:(852) 26100 611
Zetex plc 1995
Fax: (49) 89 45 49 49 49
Fax: (516) 864-7630
Fax: (852) 24250 494
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.
Transient Thermal Resistance
Pulse Width
0.1ms
20
60
100
140
180
1ms
10ms 100ms
10s
100s
1s
160
120
80
40
0
D=1(D.C)
D=0.2
D=0.1
D=0.05
D=0.5
t1
tp
D=t1
tp
Single Pulse
Derating curve
T -Temperature
(C)
M
a
x
P
ower D
i
ssi
p
ati
on
- (Wa
tt
s)
-40
0.50
0.25
1.0
0.75
0
40
80
120
200
160
Amb
ient
tem
perat
ure
SPICE PARAMETERS
*ZETEX ZTX1053A Spice model Last revision 19/01/95
*
.MODEL ZTX1053A NPN IS=2.1E-12 NF=1.0 BF=600 IKF=2.2 VAF=100
+ ISE=0.9E-13 NE=1.25 NR=0.99 BR=150 IKR=2.5 VAR=15
+ ISC=5.0E-10 NC=1.76 RB=0.1 RE=0.028 RC=0.016
+ CJC=75.1E-12 CJE=520E-12 MJC=0.415 MJE=0.367
+ VJC=0.512 VJE=0.766 TF=550E-12 TR=22E-9
*
1995 ZETEX PLC
The copyright in this model and the design embodied belong to Zetex PLC (Zetex). It is supplied
free of charge by Zetex for the purpose of research and design and may be used or copied intact
(including this notice) for that purpose only. All other rights are reserved. The model is believed
accurate but no condition or warranty as to its merchantability or fitness for purpose is given and
no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 JANUARY 1995
FEATURES
* V
CEO
=75V
* 3 Amp Continuous Current
* 10 Amp Pulse Current
* Very Low Saturation Voltage
APPLICATIONS
* Automotive Switching Circuits
* DC-DC Convertors
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX1053A
UNIT
Collector-Base Voltage
V
CBO
150
V
Collector-Emitter Voltage
V
CEO
75
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
10
A
Continuous Collector Current
I
C
3
A
Base Current
I
B
500
mA
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +200
C
ZTX1053A
C
B
E
E-Line
TO92 Compatible
ZTX1053A
PDF 
ZIP