Zetex
plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries)
Facsimile: (44)161-627 5467
Zetex GmbH
Zetex Inc.
Zetex (Asia) Ltd.
These are supported by
Streitfeldstrae 19
87 Modular Avenue
3510 Metroplaza, Tower 2
agents and distributors in
D-81673 Mnchen
Commack NY11725
Hing Fong Road, Kwai Fong
major countries world-wide
Telefon: (49) 89 45 49 49 0
Telephone: (516) 543-7100
Telephone:(852) 26100 611
Zetex plc 1995
Fax: (49) 89 45 49 49 49
Fax: (516) 864-7630
Fax: (852) 24250 494
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 JANUARY 1995
FEATURES
* V
CEO
=160V
* 3 Amp Continuous Current
* 6 Amp Pulse Current
* Low Saturation Voltage
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
200
V
Collector-Emitter Voltage
V
CEO
160
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
6
A
Continuous Collector Current
I
C
3
A
Base Current
I
B
500
mA
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +200
C
ZTX1056A
C
B
E
E-Line
TO92 Compatible
ZTX1056A
Transient Thermal Resistance
Pulse Width
0.1ms
20
60
100
140
180
1ms
10ms 100ms
10s
100s
1s
160
120
80
40
0
D=1(D.C)
D=0.2
D=0.1
D=0.05
D=0.5
t1
tp
D=t1
tp
Single Pulse
Derating curve
T -Temperature
(C)
M
a
x
P
ower D
i
ssi
p
ati
on
- (Wa
tt
s)
-40
0.50
0.25
1.0
0.75
0
40
80
120
200
160
Amb
ient
tem
perat
ure
SPICE PARAMETERS
*ZETEX ZTX1056A Spice model Last revision 24/1/95
*
.MODEL ZTX1056A NPN IS=1.41E-12 NF=1.0 BF=600 IKF=2.0 VAF=120
+ ISE=4.0E-13 NE=1.4 NR=1.0 BR=80 IKR=2.5 VAR=10
+ ISC=6.0E-10 NC=1.7 RB=0.1 RE=0.065 RC=0.015
+ CJC=53.1E-12 CJE=508.6E-12 MJC=0.461 MJE=0.350
+ VJC=0.461 VJE=0.679 TF=800E-12 TR=110E-9
*
1995 ZETEX PLC
The copyright in this model and the design embodied belong to Zetex PLC (Zetex). It is supplied
free of charge by Zetex for the purpose of research and design and may be used or copied intact
(including this notice) for that purpose only. All other rights are reserved. The model is believed
accurate but no condition or warranty as to its merchantability or fitness for purpose is given and
no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
200
310
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
CES
200
310
V
IC=100
A
Collector-Emitter
Breakdown Voltage
V
CEO
160
190
V
IC=10mA
Collector-Emitter
Breakdown Voltage
V
CEV
200
310
V
IC=100
A, V
EB
=1V
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5
8.8
V
I
E
=100
A
Collector Cut-Off Current I
CBO
0.3
10
nA
V
CB
=150V
Emitter Cut-Off Current
I
EBO
0.3
10
nA
V
EB
=4V
Collector Emitter Cut-Off
Current
I
CES
0.3
10
nA
VCES=150V
Collector-Emitter
Saturation Voltage
V
CE(sat)
25
95
175
220
60
140
250
300
mV
mV
mV
mV
I
C
=0.1A, I
B
=5mA*
I
C
=1A, I
B
=50mA*
I
C
=2A, I
B
=100mA*
I
C
=3A, I
B
=200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
950
1050
mV
I
C
=3A, I
B
=200mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
860
950
mV
IC=3A, V
CE
=10V*
Static Forward Current
Transfer Ratio
h
FE
275
300
250
60
30
420
450
400
120
50
15
1200
I
C
=10mA, V
CE
=10V*
I
C
=0.5A, V
CE
=10V*
I
C
=1A, V
CE
=10V*
I
C
=2A, V
CE
=10V*
I
C
=3A, V
CE
=10V*
I
C
=6A, V
CE
=10V*
Transition Frequency
f
T
120
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
14
25
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
110
ns
I
C
=1A, I
B
=10mA, V
CC
=50V
t
off
2450
ns
I
C
=1A, I
B
=
10mA,
V
CC
=50V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
ZTX1056A
ZTX1056A
+25C
1mA
I
C
-Collector Current
h
FE
v I
C
V
BE(sat)
v Ic
V
BE(on)
v I
C
V
CE(sat)
v I
C
I
C
-Collector Current
1mA
V
CE(sat)
v I
C
I
C
-Collector Current
10mA
1mA
100mA
1A
10A
I
C
-Collector Current
10mA
1mA
100mA
1A
10A
10mA
1mA
100mA
1A
10A
+25C
+100C
-55C
+100C
+175C
+175C
+100C
+25C
-55C
100
200
300
400
500
600
700 V
+-
=10V
0.2
0.4
0.6
0.8
1.0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.2
0.1
0.3
0.4
0.5
0.6
0.7
0.8
1.0
0.8
0.6
0.4
0.2
+25C
Ic/I
*
=15
Ic/I
*
=20
Ic/I
*
=50
V
+-
=10V
Ic/I
*
=20
Ic/I
*
=20
- 55C
10A
1A
100mA
10mA
10mA
100mA
1A
10A
100V
10V
0.1V
1V
10
0.1
0.01
1
Single Pulse Test Tamb=25C
V
CE
- Collector Voltage
DC
1s
100ms
10ms
1ms
100us
I
C
-Collector Current
Safe Operating Area
TYPICAL CHARACTERISTICS
+25C
-55C
+100C
+175C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
200
310
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
CES
200
310
V
IC=100
A
Collector-Emitter
Breakdown Voltage
V
CEO
160
190
V
IC=10mA
Collector-Emitter
Breakdown Voltage
V
CEV
200
310
V
IC=100
A, V
EB
=1V
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5
8.8
V
I
E
=100
A
Collector Cut-Off Current I
CBO
0.3
10
nA
V
CB
=150V
Emitter Cut-Off Current
I
EBO
0.3
10
nA
V
EB
=4V
Collector Emitter Cut-Off
Current
I
CES
0.3
10
nA
VCES=150V
Collector-Emitter
Saturation Voltage
V
CE(sat)
25
95
175
220
60
140
250
300
mV
mV
mV
mV
I
C
=0.1A, I
B
=5mA*
I
C
=1A, I
B
=50mA*
I
C
=2A, I
B
=100mA*
I
C
=3A, I
B
=200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
950
1050
mV
I
C
=3A, I
B
=200mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
860
950
mV
IC=3A, V
CE
=10V*
Static Forward Current
Transfer Ratio
h
FE
275
300
250
60
30
420
450
400
120
50
15
1200
I
C
=10mA, V
CE
=10V*
I
C
=0.5A, V
CE
=10V*
I
C
=1A, V
CE
=10V*
I
C
=2A, V
CE
=10V*
I
C
=3A, V
CE
=10V*
I
C
=6A, V
CE
=10V*
Transition Frequency
f
T
120
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
14
25
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
110
ns
I
C
=1A, I
B
=10mA, V
CC
=50V
t
off
2450
ns
I
C
=1A, I
B
=
10mA,
V
CC
=50V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
ZTX1056A
ZTX1056A
+25C
1mA
I
C
-Collector Current
h
FE
v I
C
V
BE(sat)
v Ic
V
BE(on)
v I
C
V
CE(sat)
v I
C
I
C
-Collector Current
1mA
V
CE(sat)
v I
C
I
C
-Collector Current
10mA
1mA
100mA
1A
10A
I
C
-Collector Current
10mA
1mA
100mA
1A
10A
10mA
1mA
100mA
1A
10A
+25C
+100C
-55C
+100C
+175C
+175C
+100C
+25C
-55C
100
200
300
400
500
600
700 V
+-
=10V
0.2
0.4
0.6
0.8
1.0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.2
0.1
0.3
0.4
0.5
0.6
0.7
0.8
1.0
0.8
0.6
0.4
0.2
+25C
Ic/I
*
=15
Ic/I
*
=20
Ic/I
*
=50
V
+-
=10V
Ic/I
*
=20
Ic/I
*
=20
- 55C
10A
1A
100mA
10mA
10mA
100mA
1A
10A
100V
10V
0.1V
1V
10
0.1
0.01
1
Single Pulse Test Tamb=25C
V
CE
- Collector Voltage
DC
1s
100ms
10ms
1ms
100us
I
C
-Collector Current
Safe Operating Area
TYPICAL CHARACTERISTICS
+25C
-55C
+100C
+175C
Zetex
plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries)
Facsimile: (44)161-627 5467
Zetex GmbH
Zetex Inc.
Zetex (Asia) Ltd.
These are supported by
Streitfeldstrae 19
87 Modular Avenue
3510 Metroplaza, Tower 2
agents and distributors in
D-81673 Mnchen
Commack NY11725
Hing Fong Road, Kwai Fong
major countries world-wide
Telefon: (49) 89 45 49 49 0
Telephone: (516) 543-7100
Telephone:(852) 26100 611
Zetex plc 1995
Fax: (49) 89 45 49 49 49
Fax: (516) 864-7630
Fax: (852) 24250 494
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 JANUARY 1995
FEATURES
* V
CEO
=160V
* 3 Amp Continuous Current
* 6 Amp Pulse Current
* Low Saturation Voltage
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
200
V
Collector-Emitter Voltage
V
CEO
160
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
6
A
Continuous Collector Current
I
C
3
A
Base Current
I
B
500
mA
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +200
C
ZTX1056A
C
B
E
E-Line
TO92 Compatible
ZTX1056A
Transient Thermal Resistance
Pulse Width
0.1ms
20
60
100
140
180
1ms
10ms 100ms
10s
100s
1s
160
120
80
40
0
D=1(D.C)
D=0.2
D=0.1
D=0.05
D=0.5
t1
tp
D=t1
tp
Single Pulse
Derating curve
T -Temperature
(C)
M
a
x
P
ower D
i
ssi
p
ati
on
- (Wa
tt
s)
-40
0.50
0.25
1.0
0.75
0
40
80
120
200
160
Amb
ient
tem
perat
ure
SPICE PARAMETERS
*ZETEX ZTX1056A Spice model Last revision 24/1/95
*
.MODEL ZTX1056A NPN IS=1.41E-12 NF=1.0 BF=600 IKF=2.0 VAF=120
+ ISE=4.0E-13 NE=1.4 NR=1.0 BR=80 IKR=2.5 VAR=10
+ ISC=6.0E-10 NC=1.7 RB=0.1 RE=0.065 RC=0.015
+ CJC=53.1E-12 CJE=508.6E-12 MJC=0.461 MJE=0.350
+ VJC=0.461 VJE=0.679 TF=800E-12 TR=110E-9
*
1995 ZETEX PLC
The copyright in this model and the design embodied belong to Zetex PLC (Zetex). It is supplied
free of charge by Zetex for the purpose of research and design and may be used or copied intact
(including this notice) for that purpose only. All other rights are reserved. The model is believed
accurate but no condition or warranty as to its merchantability or fitness for purpose is given and
no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.
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